component
2SD1760Q
Public Made by Adomby adom
Changjing Bipolar Transistors - BJT, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 1d ago |
| viewers | 1d ago |
| 2sd1760q-etched.glb | 1d ago |
| 2sd1760q-etched.step | 1d ago |
| 2sd1760q-hero.glb | 1d ago |
| 2sd1760q-hero.overlay.json | 1d ago |
| 2sd1760q.glb | 1d ago |
| 2sd1760q.kicad_mod | 1d ago |
| 2sd1760q.kicad_sym | 1d ago |
| 2sd1760q.lbr | 1d ago |
| 2sd1760q.step | 1d ago |
| package.json | 1d ago |
| page.json | 1d ago |
| README.md | 1d ago |
| verification.json | 1d ago |
2SD1760Q
Changjing · Bipolar Transistors - BJT · TO-252-2L
2SD1760Q from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor, with the emitter-base voltage limited to VEBO 5 V maximum. |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor, rated for a collector-base voltage VCBO of 60 V and collector-emitter voltage VCEO of 50 V maximum, with collector current IC 3 A continuous. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor, the reference for the 5 V maximum emitter-base voltage VEBO. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC current gain | hFE(1) | 82 | 390 | VCE=3V, IC=500mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 1 | V | IC=2A, IB=200mA | 2 | ||
| Collector cut-off current | ICBO | 1 | μA | VCB=40V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | 1 | μA | VEB=4V, IC=0 | 2 | ||
| Collector output capacitance | Cob | 40 | pF | VCB=10V, IE=0, f=1MHz | 2 | ||
| Transition frequency | fT | 90 | MHz | VCE=5V, IC=500mA, f=30MHz | 2 | ||
| Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=50μA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | IC=1mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=50μA, IC=0 | 2 | ||
| Collector-base voltage | VCBO | 60 | V | Ta=25℃ | 1 | ||
| Collector-emitter voltage | VCEO | 50 | V | Ta=25℃ | 1 | ||
| Emitter-base voltage | VEBO | 5 | V | Ta=25℃ | 1 | ||
| Collector current, continuous | IC | 3 | A | Ta=25℃ | 1 | ||
| Collector power dissipation | PC | 1.5 | W | Ta=25℃ | 1 | ||
| Operating junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction to ambient | RθJA | 83.3 | ℃/W | Device mounted on 1 in2 FR-4 board, 2oz copper, still air, Ta=25℃ | 1 | ||
| Thermal resistance, junction to case | RθJC | 8.3 | ℃/W | TC=25℃ | 1 |
CAD (KiCad official)
- Symbol:
2SD1760Q - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
2sd1760q-etched.step/2sd1760q-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd1760q.step/2sd1760q.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
9a1f154b70230d4a, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).