component
2SD1664U
Public Made by Adomby adom
CBI Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 2d ago |
| viewers | 2d ago |
| 2sd1664u-etched.glb | 2d ago |
| 2sd1664u-etched.step | 2d ago |
| 2sd1664u-hero.glb | 2d ago |
| 2sd1664u-hero.overlay.json | 2d ago |
| 2sd1664u.glb | 2d ago |
| 2sd1664u.kicad_mod | 2d ago |
| 2sd1664u.kicad_sym | 2d ago |
| 2sd1664u.lbr | 2d ago |
| 2sd1664u.step | 2d ago |
| package.json | 2d ago |
| page.json | 2d ago |
| README.md | 2d ago |
2SD1664U
CBI · Bipolar (BJT) · SOT-89
2SD1664U from CBI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 5 V and IEBO max 0.5 µA at VEB = 4 V. |
| 2 | C | passive | Collector (also the tab on the SOT-89 package); VCBO 40 V, VCEO 32 V, IC 1 A DC and 2 A pulse. |
| 3 | E | passive | Emitter of the NPN transistor; ratings are 150 °C junction temperature and 0.5 W dissipation (2 W on a 40 x 40 x 0.7 mm ceramic board). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Breakdown Voltage | V(BR)CBO | 40 | V | at IC = 50 µA | 1 | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | 32 | V | at IC = 1 mA | 1 | ||
| Emitter Base Breakdown Voltage | V(BR)EBO | 5 | V | at IE = 50 µA | 1 | ||
| DC Current Gain, Group P | hFE | 82 | 180 | - | at VCE = 3 V, IC = 100 mA | 1 | |
| DC Current Gain, Group Q | hFE | 120 | 270 | - | at VCE = 3 V, IC = 100 mA | 1 | |
| DC Current Gain, Group R | hFE | 180 | 390 | - | at VCE = 3 V, IC = 100 mA | 1 | |
| Collector Cutoff Current | ICBO | 0.5 | µA | at VCB = 20 V | 1 | ||
| Emitter Cutoff Current | IEBO | 0.5 | µA | at VEB = 4 V | 1 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 0.4 | V | at IC = 500 mA, IB = 50 mA | 1 | ||
| Collector Base Voltage | VCBO | 40 | V | 1 | |||
| Collector Emitter Voltage | VCEO | 32 | V | 1 | |||
| Emitter Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current - DC | IC | 1 | A | 1 | |||
| Collector Current - Pulse | ICP | 2 | A | Single pulse, PW = 100 ms | 1 | ||
| Total Power Dissipation | Ptot | 0.5 | W | 1 | |||
| Total Power Dissipation | Ptot | 2 | W | When mounted on a 40 X 40 X 0.7 mm ceramic board | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TStg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
2SD1664U - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sd1664u-etched.step/2sd1664u-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd1664u.step/2sd1664u.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CBI datasheet (3 pp, sha256
81daf24124e00ac5, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).