component
2SD1664G-R-AB3-R
Public Made by Adomby adom
UTC Unisonic Tech Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| 2sd1664g-r-ab3-r-etched.glb | 7d ago |
| 2sd1664g-r-ab3-r-etched.step | 7d ago |
| 2sd1664g-r-ab3-r-hero.glb | 7d ago |
| 2sd1664g-r-ab3-r-hero.overlay.json | 7d ago |
| 2sd1664g-r-ab3-r.glb | 7d ago |
| 2sd1664g-r-ab3-r.kicad_mod | 7d ago |
| 2sd1664g-r-ab3-r.kicad_sym | 7d ago |
| 2sd1664g-r-ab3-r.lbr | 7d ago |
| 2sd1664g-r-ab3-r.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
2SD1664G-R-AB3-R
UTC Unisonic Tech · Bipolar (BJT) · SOT-89
2SD1664G-R-AB3-R from UTC Unisonic Tech, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the NPN transistor; the datasheet gives emitter-base breakdown voltage BVEBO of 5 V and emitter cut-off current IEBO of 0.5 μA max at VEB = 4 V. |
| 2 | C | passive | Collector terminal of the NPN transistor; absolute maximum collector-base voltage VCBO is 40 V and DC collector current is 1 A (2 A pulse, duty 1/2, PW 20 ms). |
| 3 | E | passive | Emitter terminal of the NPN transistor; absolute maximum collector-emitter voltage VCEO is 32 V and emitter-base voltage VEBO is 5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.15 | 0.4 | V | IC/IB=500mA /50mA | 3 | |
| Collector Base Breakdown Voltage | BVCBO | 40 | V | IC= 50μA | 3 | ||
| Collector Emitter Breakdown Voltage | BVCEO | 32 | V | IC= 1mA | 3 | ||
| Emitter Base Breakdown Voltage | BVEBO | 5 | V | IE=50μA | 3 | ||
| Collector Cut-Off Current | ICBO | 0.5 | μA | VCB=20V | 3 | ||
| Emitter Cut-Off Current | IEBO | 0.5 | μA | VEB= 4V | 3 | ||
| DC Current Gain (rank R, per classification table) | hFE | 180 | 390 | VCE= 3V, Ic= 100mA | 3 | ||
| Transition Frequency | fT | 150 | MHz | VCE=5V, IE=-50mA, f=100MHz | 3 | ||
| Output Capacitance | Cob | 15 | pF | VCB= 10V, IE= 0A, f=1MHz | 3 | ||
| Collector-Base Voltage | VCBO | 40 | V | 3 | |||
| Collector-Emitter Voltage | VCEO | 32 | V | 3 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 3 | |||
| Collector Current DC | IC | 1 | A | DC | 3 | ||
| Collector Current Pulse | IC | 2 | A | Duty=1/2, PW=20ms | 3 | ||
| Collector Power Dissipation (SOT-89) | PC | 0.5 | W | SOT-89 | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 |
CAD (KiCad official)
- Symbol:
2SD1664G-R-AB3-R - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sd1664g-r-ab3-r-etched.step/2sd1664g-r-ab3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd1664g-r-ab3-r.step/2sd1664g-r-ab3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (5 pp, sha256
e80e0db566df10d8, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).