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2SD1664 DAR

Public Made by Adom

by adom

GME(银河微电) Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SD1664 DAR

GME(银河微电) · Bipolar (BJT) · SOT-89

2SD1664 DAR from GME(银河微电), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; ratings are VEBO 5 V and hFE 82-390 at VCE=3V, IC=100mA.
2 E passive Emitter of the NPN transistor; emitter-base voltage limit is 5 V.
3 C passive Collector of the NPN transistor (also the tab); VCEO 32 V, VCBO 40 V, IC 1 A continuous and 2 A pulse.

Key specifications

Parameter Value
Manufacturer GME(银河微电)
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 40 V IC=50μA,IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 32 V IC=1mA,IB=0 2
Emitter-base breakdown voltage V(BR)EBO 5 V IE=50μA,IC=0 2
Collector cut-off current ICBO 0.5 μA VCB=20V,IE=0 2
Emitter cut-off current IEBO 0.5 μA VEB=4V,IC=0 2
DC current gain (rank R, DAR) hFE 180 390 VCE=3V,IC=100mA 2
Collector-emitter saturation voltage VCE(sat) 0.15 0.4 V IC=500mA, IB= 50mA 2
Transition frequency fT 150 MHz VCE=5V, IC= -50mA, f=100MHz 2
Collector output capacitance Cob 15 pF VCB=10V,IE=0,f=1MHz 2
Collector-base voltage VCBO 40 V 1
Collector-emitter voltage VCEO 32 V 1
Emitter-base voltage VEBO 5 V 1
Collector current - continuous IC 1 A 1
Collector current - pulse IC 2 A 1
Collector dissipation PC 500 mW 1
Junction and storage temperature TJ, TSTG -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: 2SD1664 DAR
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sd1664-dar-etched.step / 2sd1664-dar-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd1664-dar.step / 2sd1664-dar.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GME(银河微电) datasheet (4 pp, sha256 094f5a18d7a6f5cd, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF