component
2SD1628-G
Public Made by Adomby adom
YFW Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SD1628-G
YFW · Bipolar Transistors - BJT · SOT-89
2SD1628-G from YFW, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the NPN transistor; emitter-base voltage VEBO max 6 V and VBE(sat) max 1.5 V at IC=3 A, IB=60 mA. |
| 2 | Collector | passive | Collector of the NPN transistor; VCEO 20 V, VCBO 60 V, continuous IC 5 A and pulsed ICP 8 A. |
| 3 | Emitter | passive | Emitter of the NPN transistor; common terminal for the base and collector currents. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | SOT-89 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 60 | V | Ta = 25℃ | 1 | ||
| Collector-Emitter Voltage | VCEO | 20 | V | Ta = 25℃ | 1 | ||
| Emitter-Base Voltage | VEBO | 6 | V | Ta = 25℃ | 1 | ||
| Collector Current - Continuous | IC | 5 | A | Ta = 25℃ | 1 | ||
| Collector Current - Pulse | ICP | 8 | A | Ta = 25℃ | 1 | ||
| Collector Power Dissipation | PC | 0.5 | W | Ta = 25℃ | 1 | ||
| Collector Power Dissipation (Note 1) | PC | 1.5 | W | Mounted on ceramic substrate of 250mm2 X0.8mm | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | Ta = 25℃ | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | VCBO | 60 | V | Ic= 100 μA, IE= 0 | 1 | ||
| Collector-emitter breakdown voltage | VCEO | 20 | V | Ic= 1 mA, IB= 0 | 1 | ||
| Emitter-base breakdown voltage | VEBO | 6 | V | IE= 100μA, IC= 0 | 1 | ||
| Collector-base cut-off current | ICBO | 0.1 | uA | VCB= 50 V, IE= 0 | 1 | ||
| Emitter cut-off current | IEBO | 0.1 | uA | VEB= 5V, IC=0 | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=3 A, IB=60mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.5 | V | IC=3 A, IB=60mA | 1 | ||
| DC current gain (2SD1628-G range) | hFE | 280 | 560 | VCE= 2V, IC=500mA; classification G | 2 | ||
| DC current gain | hFE | 95 | VCE= 2V, IC=3 A | 1 | |||
| Turn-on time | ton | 30 | ns | See Specified Test Circuit | 1 | ||
| Storage time | tstg | 300 | ns | See Specified Test Circuit | 1 | ||
| Fall time | tf | 40 | ns | See Specified Test Circuit | 1 | ||
| Collector output capacitance | Cob | 45 | pF | VCB= 10V, f=1MHz | 1 | ||
| Transition frequency | fT | 120 | MHz | VCE= 10V, IC=50mA | 1 |
CAD (KiCad official)
- Symbol:
2SD1628-G - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sd1628-g-etched.step/2sd1628-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd1628-g.step/2sd1628-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YFW datasheet (4 pp, sha256
4dc2f8dec476dc05, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).