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2SD1624G-S-AB3-R

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by adom

UTC(Unisonic Tech) Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SD1624G-S-AB3-R

UTC(Unisonic Tech) · Bipolar Transistors - BJT · SOT-89

2SD1624G-S-AB3-R from UTC(Unisonic Tech), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; VEBO max 6 V, with base current IB=100mA used for VCE(SAT) test at IC=2A.
2 C passive Collector of the NPN transistor; VCBO 60 V, VCEO 50 V, IC 3 A DC and 6 A pulse maximum.
3 E passive Emitter of the NPN transistor; connected to the ground/return side of the switched load, with VEBO max 6 V.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO 60 V IC=10A, IE=0 2
Collector-Emitter Breakdown Voltage BVCEO 50 V IC=1mA, RBE=∞ 2
Emitter-Base Breakdown Voltage BVEBO 6 V IE=10A, IC=0 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.19 0.5 V IC=2A, IB=100mA 2
Base-Emitter Saturation Voltage VBE(SAT) 0.94 1.2 V IC=2A, IB=100mA 2
Collector Cut-Off Current ICBO 1 A VCB=40V, IE=0 2
Emitter Cut-Off Current IEBO 1 A VEB=4V, IC=0 2
DC Current Gain (rank S) hFE 140 280 VCE=2V, Ic=100mA 2
Turn-ON Time tON 70 ns See test circuit 2
Storage Time tSTG 650 ns See test circuit 2
Fall Time tF 35 ns See test circuit 2
Collector-Base Voltage VCBO 60 V TA=25C 2
Collector-Emitter Voltage VCEO 50 V TA=25C 2
Emitter-Base Voltage VEBO 6 V TA=25C 2
Collector Power Dissipation PC 500 mW Tc=25C 2
Collector Current DC IC 3 A TA=25C 2
Collector Current Pulse ICP 6 A TA=25C 2
Junction Temperature TJ 150 C TA=25C 2
Storage Temperature TSTG -55 150 C 2
Gain-Bandwidth Product fT 150 MHz VCE=10V, IC=50mA 2
Output Capacitance COB 25 pF VCE=10V, f=1MHz 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Emitter-Base Voltage VEBO 6 V Collector Power Dissipation( Tc=25C) PC 500 mW 2

CAD (KiCad official)

  • Symbol: 2SD1624G-S-AB3-R
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sd1624g-s-ab3-r-etched.step / 2sd1624g-s-ab3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd1624g-s-ab3-r.step / 2sd1624g-s-ab3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (5 pp, sha256 83b0794aa78bbece, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF