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2SD1620-TD-E

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-89-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SD1620-TD-E

onsemi · Bipolar (BJT) · SOT-89-3

2SD1620-TD-E from onsemi, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base passive Base terminal of the NPN transistor; the datasheet gives emitter-to-base breakdown V(BR)EBO of 6 V (IE=10μA, IC=0A) and emitter-to-base voltage VEBO of 6 V as absolute maximum ratings.
2 Collector passive Collector terminal; absolute maximum ratings are VCBO 30 V, VCEO 10 V, VCEX 20 V, continuous collector current IC 3 A and pulse current ICP 5 A.
3 Emitter passive Emitter terminal; the emitter-to-base voltage limit is VEBO 6 V, and the datasheet gives no separate emitter-specific rating.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-89-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain hFE 140 210 VCE=2V, IC=3A 2
Gain-Bandwidth Product fT 200 MHz VCE=10V, IC=50mA 2
Output Capacitance Cob 30 pF VCB=10V, f=1MHz 2
Collector-to-Emitter Saturation Voltage VCE(sat) 0.3 0.4 V IC=3A, IB=60mA 2
Collector Cutoff Current ICBO 100 nA VCB=20V, IE=0A 2
Emitter Cutoff Current IEBO 100 nA VEB=4V, IC=0A 2
Collector-to-Base Breakdown Voltage V(BR)CBO 30 V IC=10μA, IE=0A 2
Collector-to-Emitter Breakdown Voltage V(BR)CEX 20 V IC=1mA, VBE=3V 2
Collector-to-Emitter Breakdown Voltage V(BR)CEO 10 V IC=1mA, RBE=∞ 2
Emitter-to-Base Breakdown Voltage V(BR)EBO 6 V IE=10μA, IC=0A 2
Collector-to-Base Voltage VCBO 30 V 1
Collector-to-Emitter Voltage VCEX 20 V 1
Collector-to-Emitter Voltage VCEO 10 V 1
Emitter-to-Base Voltage VEBO 6 V 1
Collector Current IC 3 A 1
Collector Current (Pulse) ICP 5 A 1
Collector Dissipation PC 500 mW 2
Collector Dissipation (mounted on ceramic substrate) PC 1.3 W When mounted on ceramic substrate (250mm2×0.8mm) 2
Junction Temperature Tj 150 °C 2
Storage Temperature Tstg -55 150 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Collector-to-Base Voltage, VCB, V PC, Ta 3

CAD (KiCad official)

  • Symbol: 2SD1620-TD-E
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89-3 (KiCad packages3D, STEP)
  • 3D model files: 2sd1620-td-e-etched.step / 2sd1620-td-e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd1620-td-e.step / 2sd1620-td-e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 728eebd5e3f0acaf, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF