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2SD1616AG-L-AB3-R

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UTC(Unisonic Tech) Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SD1616AG-L-AB3-R

UTC(Unisonic Tech) · Bipolar (BJT) · SOT-89

2SD1616AG-L-AB3-R from UTC(Unisonic Tech), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; the datasheet's pin assignment for SOT-89 (AB3) lists pin 1 as Base, with VEBO max 6 V and BVEBO min 6 V.
2 C passive Collector; the datasheet's pin assignment for SOT-89 (AB3) lists pin 2 as Collector, with IC 1 A DC, 2 A pulse, and VCBO 120 V and VCEO 60 V for the 2SD1616A.
3 E passive Emitter; the datasheet's pin assignment for SOT-89 (AB3) lists pin 3 as Emitter, and the SOT-89 total power dissipation is 500 mW.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Voltage (2SD1616A) VCBO 120 V TA=25C 3
Collector to Emitter Voltage (2SD1616A) VCEO 60 V TA=25C 3
Emitter to Base Voltage VEBO 6 V TA=25C 3
Collector Current DC IC 1 A TA=25C 3
Collector Current Pulse ICM 2 A Pulse width 10ms, Duty cycle<50% 3
Total Power Dissipation SOT-89 PC 500 mW SOT-89 3
Junction Temperature TJ 150 C 3
Storage Temperature TSTG -55 150 C 3
Collector to Base Breakdown Voltage (2SD1616A) BVCBO 120 V IC=100μA, IE=0 3
Collector to Emitter Breakdown Voltage (2SD1616A) BVCEO 60 V IC=10mA, IB=0 3
Emitter to Base Breakdown Voltage BVEBO 6 V IE=10mA, IC=0 3
Collector-Emitter Saturation Voltage VCE (SAT) 0.15 0.3 V IC=1A, IB=50mA 3
Base-Emitter Saturation Voltage VBE (SAT) 0.9 1.2 V IC=1A, IB=50mA 3
Base Emitter On Voltage VBE (ON) 600 640 720 mV VCE=2V, IC=50mA 3
Collector Cut-Off Current ICBO 100 nA VCB=60V 3
Emitter Cut-Off Current IEBO 100 nA VEB=6V 3
DC Current Gain hFE1 135 600 VCE=2V, IC=100mA 3
DC Current Gain, rank L hFE1 300 600 Classification of hFE1, rank L 3
DC Current Gain 2 hFE2 81 VCE=2V, IC=1A 3
Transition Frequency fT 100 160 MHz VCE=2V, IC=100mA 3
Output Capacitance Cob 19 pF VCB=10V, f=1MHz 3
Turn On Time tON 0.07 μs VCE=10V, IC=100mA 3
Storage Time tSTG 0.95 μs IB1=-IB2=10mA 3
Fall Time tF 0.07 μs VBE(OFF)=-2 ~ -3V 3

CAD (KiCad official)

  • Symbol: 2SD1616AG-L-AB3-R
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sd1616ag-l-ab3-r-etched.step / 2sd1616ag-l-ab3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd1616ag-l-ab3-r.step / 2sd1616ag-l-ab3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (5 pp, sha256 4893edb85381be21, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF