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2SD1616AG-G-AB3-R

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UTC Unisonic Tech Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SD1616AG-G-AB3-R

UTC Unisonic Tech · Bipolar (BJT) · SOT-89

2SD1616AG-G-AB3-R from UTC Unisonic Tech, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the NPN transistor, pin 1 in the SOT-89 (AB3) pin assignment; device emitter-to-base voltage is rated VEBO 6 V maximum.
2 C passive Collector terminal of the NPN transistor, pin 2 in the SOT-89 (AB3) pin assignment; device DC collector current is rated IC 1 A, with pulsed ICM 2 A (pulse width 10 ms, duty cycle below 50%).
3 E passive Emitter terminal of the NPN transistor, pin 3 in the SOT-89 (AB3) pin assignment; the datasheet gives only device-level ratings, which apply to the device as a whole.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Voltage (2SD1616A) VCBO 120 V 3
Collector to Emitter Voltage (2SD1616A) VCEO 60 V 3
Emitter to Base Voltage VEBO 6 V 3
DC Collector Current IC 1 A 3
Collector Current Pulse ICM 2 A Pulse width10ms, Duty cycle<50% 3
Total Power Dissipation PC 750 mW 3
Junction Temperature TJ 150 C 3
Storage Temperature TSTG -55 150 C 3
Base Emitter On Voltage VBE (ON) 600 640 700 mV VCE =2V, IC =50mA 3
Collector-Emitter Saturation Voltage VCE (SAT) 0.15 0.3 V IC=1A, IB=50mA 3
Base-Emitter Saturation Voltage VBE (SAT) 0.9 1.2 V IC=1A, IB=50mA 3
Collector Cut-Off Current ICBO 100 nA VCB=60V 3
Emitter Cut-Off Current IEBO 100 nA VEB= 6V 3
DC Current Gain hFE1 hFE1 135 600 VCE =2V, IC =100mA 3
DC Current Gain hFE1 rank G (classification table) hFE1 200 400 3
DC Current Gain hFE2 hFE2 81 VCE =2V, IC=1A 3
Transition Frequency fT 100 160 MHz VCE =2V, IC =100mA 3
Output Capacitance Cob 19 pF VCB =10V, f =1MHz 3
Turn On Time tON 0.07 μs VCE =10V, IC =100mA 3
Storage Time tSTG 0.95 μs IB1 = -IB2 =10mA 3
Fall Time tF 0.07 μs VBE(OFF) = -2 ~ -3V 3

CAD (KiCad official)

  • Symbol: 2SD1616AG-G-AB3-R
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sd1616ag-g-ab3-r-etched.step / 2sd1616ag-g-ab3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd1616ag-g-ab3-r.step / 2sd1616ag-g-ab3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (5 pp, sha256 399382c284d5c9f9, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF