component
2SD1164 DAR
Public Made by Adomby adom
MSKSEMI Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| 2sd1164-dar-etched.glb | 7d ago |
| 2sd1164-dar-etched.step | 7d ago |
| 2sd1164-dar-hero.glb | 7d ago |
| 2sd1164-dar-hero.overlay.json | 7d ago |
| 2sd1164-dar.glb | 7d ago |
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| 2sd1164-dar.lbr | 7d ago |
| 2sd1164-dar.step | 7d ago |
| package.json | 7d ago |
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| README.md | 7d ago |
2SD1164 DAR
MSKSEMI · Bipolar (BJT) · SOT-89
2SD1164 DAR from MSKSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal; the datasheet's absolute maximum emitter-base voltage is VEBO 5 V, with IC/IB = 500 mA/50 mA given for the typical VCE(sat) of 0.15 V. |
| 2 | COLLECTOR | passive | Collector terminal; continuous collector current is limited to 1 A, collector-base voltage VCBO is 40 V and collector power dissipation PC is 500 mW. |
| 3 | EMITTER | passive | Emitter terminal and reference for the collector-emitter rating VCEO of 32 V; emitter-base voltage VEBO is 5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V | 2 | |||
| Collector-Emitter Voltage | VCEO | 32 | V | 2 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 2 | |||
| Collector Current - Continuous | IC | 1 | A | 2 | |||
| Collector power dissipation | PC | 500 | mW | 2 | |||
| Junction Temperature | TJ | 150 | ℃ | 2 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 2 | ||
| Collector-base breakdown voltage | V(BR)CBO | 40 | V | IC=50μA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 32 | V | IC=1mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=50μA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | 0.5 | μA | VCB=20V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | 0.5 | μA | VEB=4V, IC=0 | 2 | ||
| DC current gain (rank R) | hFE | 180 | 390 | VCE=3V, IC=100mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.4 | V | IC=0.5A, IB=50mA | 2 | ||
| Transition frequency | fT | 150 | MHz | VCE=5V, IC=50mA, f=100MHz | 2 | ||
| Collector output capacitance | Cob | 15 | pF | VCB=10V, IE=0, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
2SD1164 DAR - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sd1164-dar-etched.step/2sd1164-dar-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd1164-dar.step/2sd1164-dar.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (6 pp, sha256
a104421189f36070, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).