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2SD1060G-S-AB3-R
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UTC Unisonic Tech Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SD1060G-S-AB3-R
UTC Unisonic Tech · Bipolar (BJT) · SOT-89
2SD1060G-S-AB3-R from UTC Unisonic Tech, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the NPN transistor; the datasheet rates emitter-to-base voltage VEBO at 6 V max and collector current IC at 5 A max (9 A pulse). |
| 2 | C | passive | Collector terminal; the datasheet rates collector-to-base voltage VCBO at 60 V (2SD1060) or 100 V (2SD1060A) and collector current IC at 5 A max, with SOT-89 collector dissipation PC of 500 mW. |
| 3 | E | passive | Emitter terminal; the datasheet rates collector-to-emitter voltage VCEO at 50 V max and emitter-to-base voltage VEBO at 6 V max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-to-Base Breakdown Voltage (2SD1060) | BVCBO | 60 | V | IC =1mA, IE=0 | 3 | ||
| Collector-to-Emitter Breakdown Voltage | BVCEO | 50 | V | IC=1mA, RBE = | 3 | ||
| Emitter-to-Base Breakdown Voltage | BVEBO | 6 | V | IC =0, IE=1mA | 3 | ||
| Collector Cut-Off Current | ICBO | 0.1 | mA | VCB=40V, IE=0 | 3 | ||
| Emitter Cut-Off Current | IEBO | 0.1 | mA | VEB=4V, IC=0 | 3 | ||
| DC Current Gain (rank S, per CLASSIFICATION of hFE1 180-360) | hFE1 | 180 | 360 | VCE=2V, IC=1A | 3 | ||
| DC Current Gain | hFE2 | 30 | VCE=2V, IC=3A | 3 | |||
| Output Capacitance | Cob | 100 | pF | VCB =10V, f=1MHz | 3 | ||
| Collector-to-Emitter Saturation Voltage | VCE(SAT) | 0.4 | V | IC=3A, IB=0.3A | 3 | ||
| Gain Bandwidth Product | fT | 30 | MHZ | VCE =5V, IC =1A | 3 | ||
| Turn-ON Time | tON | 0.1 | μs | See specified test circuit | 3 | ||
| Storage Time | tSTG | 1.4 | μs | See specified test circuit | 3 | ||
| Fall Time | tF | 0.2 | μs | See specified test circuit | 3 | ||
| Collector to Base Voltage (2SD1060) | VCBO | 60 | V | 3 | |||
| Collector to Emitter Voltage | VCEO | 50 | V | 3 | |||
| Emitter to Base Voltage | VEBO | 6 | V | 3 | |||
| Collector Current | IC | 5 | A | 3 | |||
| Collector Current (Pulse) | ICP | 9 | A | 3 | |||
| Collector Dissipation (SOT-89) | PC | 500 | mW | SOT-89 | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -40 | 150 | °C | 3 |
CAD (KiCad official)
- Symbol:
2SD1060G-S-AB3-R - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sd1060g-s-ab3-r-etched.step/2sd1060g-s-ab3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd1060g-s-ab3-r.step/2sd1060g-s-ab3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (6 pp, sha256
f56164b690d2b775, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SD1060G-S-AB3-R
**UTC Unisonic Tech** · Bipolar (BJT) · SOT-89
2SD1060G-S-AB3-R from UTC Unisonic Tech, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the NPN transistor; the datasheet rates emitter-to-base voltage VEBO at 6 V max and collector current IC at 5 A max (9 A pulse). |
| 2 | C | passive | Collector terminal; the datasheet rates collector-to-base voltage VCBO at 60 V (2SD1060) or 100 V (2SD1060A) and collector current IC at 5 A max, with SOT-89 collector dissipation PC of 500 mW. |
| 3 | E | passive | Emitter terminal; the datasheet rates collector-to-emitter voltage VCEO at 50 V max and emitter-to-base voltage VEBO at 6 V max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-to-Base Breakdown Voltage (2SD1060) | BVCBO | 60 | | | V | IC =1mA, IE=0 | 3 |
| Collector-to-Emitter Breakdown Voltage | BVCEO | 50 | | | V | IC=1mA, RBE = | 3 |
| Emitter-to-Base Breakdown Voltage | BVEBO | 6 | | | V | IC =0, IE=1mA | 3 |
| Collector Cut-Off Current | ICBO | | | 0.1 | mA | VCB=40V, IE=0 | 3 |
| Emitter Cut-Off Current | IEBO | | | 0.1 | mA | VEB=4V, IC=0 | 3 |
| DC Current Gain (rank S, per CLASSIFICATION of hFE1 180-360) | hFE1 | 180 | | 360 | | VCE=2V, IC=1A | 3 |
| DC Current Gain | hFE2 | 30 | | | | VCE=2V, IC=3A | 3 |
| Output Capacitance | Cob | | | 100 | pF | VCB =10V, f=1MHz | 3 |
| Collector-to-Emitter Saturation Voltage | VCE(SAT) | | | 0.4 | V | IC=3A, IB=0.3A | 3 |
| Gain Bandwidth Product | fT | | 30 | | MHZ | VCE =5V, IC =1A | 3 |
| Turn-ON Time | tON | | 0.1 | | μs | See specified test circuit | 3 |
| Storage Time | tSTG | | 1.4 | | μs | See specified test circuit | 3 |
| Fall Time | tF | | 0.2 | | μs | See specified test circuit | 3 |
| Collector to Base Voltage (2SD1060) | VCBO | | | 60 | V | | 3 |
| Collector to Emitter Voltage | VCEO | | | 50 | V | | 3 |
| Emitter to Base Voltage | VEBO | | | 6 | V | | 3 |
| Collector Current | IC | | | 5 | A | | 3 |
| Collector Current (Pulse) | ICP | | | 9 | A | | 3 |
| Collector Dissipation (SOT-89) | PC | | | 500 | mW | SOT-89 | 3 |
| Junction Temperature | TJ | | | 150 | °C | | 3 |
| Storage Temperature | TSTG | -40 | | 150 | °C | | 3 |
## CAD (KiCad official)
- Symbol: `2SD1060G-S-AB3-R`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `2sd1060g-s-ab3-r-etched.step` / `2sd1060g-s-ab3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sd1060g-s-ab3-r.step` / `2sd1060g-s-ab3-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603058526415560704) (6 pp, sha256 `f56164b690d2b775`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sd1060g-s-ab3-r-datasheet.pdf)