# 2SD1000K

**Shikues** · Bipolar Transistors - BJT · SOT-89

2SD1000K from Shikues, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; emitter-base voltage VEBO max 6 V, with hFE measured at VCE = 1 V. |
| 2 | C | passive | Collector (also the tab); VCBO 40 V, VCEO 25 V, IC max 0.8 A, Ptot 625 mW. |
| 3 | E | passive | Emitter; connects to the load return/ground side of the NPN transistor. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (5 mA) | hFE | 45 |  |  |  | VCE = 1 V, IC = 5 mA | 1 |
| DC Current Gain, group K (100 mA) | hFE | 200 |  | 400 |  | VCE = 1 V, IC = 100 mA | 1 |
| DC Current Gain (800 mA) | hFE | 40 |  |  |  | VCE = 1 V, IC = 800 mA | 1 |
| Collector Base Cutoff Current | ICBO |  |  | 100 | nA | VCB = 35 V | 1 |
| Emitter Base Cutoff Current | IEBO |  |  | 100 | nA | VEB = 6 V | 1 |
| Collector Base Breakdown Voltage | V(BR)CBO | 40 |  |  | V | IC = 100 µA | 1 |
| Collector Emitter Breakdown Voltage | V(BR)CEO | 25 |  |  | V | IC = 2 mA | 1 |
| Emitter Base Breakdown Voltage | V(BR)EBO | 6 |  |  | V | IE = 100 µA | 1 |
| Collector Emitter Saturation Voltage | VCE(sat) |  |  | 0.5 | V | IC = 800 mA, IB = 80 mA | 1 |
| Base Emitter Saturation Voltage | VBE(sat) |  |  | 1.2 | V | IC = 800 mA, IB = 80 mA | 1 |
| Base Emitter Voltage | VBE |  |  | 1 | V | IC = 10 mA, VCE = 1 V | 1 |
| Gain Bandwidth Product | fT | 100 |  |  | MHz | VCE = 10 V, IC = 50 mA | 1 |
| Collector Base Voltage | VCBO |  |  | 40 | V | Ta = 25 °C | 1 |
| Collector Emitter Voltage | VCEO |  |  | 25 | V | Ta = 25 °C | 1 |
| Emitter Base Voltage | VEBO |  |  | 6 | V | Ta = 25 °C | 1 |
| Collector Current | IC |  |  | 0.8 | A | Ta = 25 °C | 1 |
| Power Dissipation | Ptot |  |  | 625 | mW | Ta = 25 °C | 1 |
| Junction Temperature | Tj |  |  | 150 | °C | Ta = 25 °C | 1 |
| Storage Temperature Range | TStg | -55 |  | 150 | °C |  | 1 |
| Collector Base Capacitance | COB |  | 9 |  | pF | VCB = 10 V, f = 1 MHz | 1 |

## CAD (KiCad official)

- Symbol: `2SD1000K`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `2sd1000k-etched.step` / `2sd1000k-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sd1000k.step` / `2sd1000k.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shikues datasheet](docs/2sd1000k-datasheet.pdf) (3 pp, sha256 `069e56f3fc0142b7`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sd1000k-datasheet.pdf)