# 2SCR586D3TL1

**ROHM Semicon** · Bipolar (BJT) · TO-252-2

2SCR586D3TL1 from ROHM Semicon, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base (pin 1); drives the NPN transistor, with VEBO max 6 V and VCE(sat) 300 mV max at IC/IB = 2 A/100 mA. |
| 2 | C | passive | Collector (pin 2), brought out as the exposed tab on the TL1 two-lead package; VCEO 80 V, VCBO 80 V, IC 5 A continuous and 10 A pulsed. |
| 3 | E | passive | Emitter (pin 3); the current return for the NPN transistor. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCEO |  |  | 80 | V |  | 2 |
| Collector-base voltage | VCBO |  |  | 80 | V |  | 2 |
| Emitter-base voltage | VEBO |  |  | 6 | V |  | 2 |
| Collector current | IC |  |  | 5 | A |  | 2 |
| Collector current (pulsed) | ICP |  |  | 10 | A | Pw=10ms Single Pulse | 2 |
| Power dissipation | PD |  |  | 10 | W | Tc=25℃ | 2 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 2 |
| Range of storage temperature | Tstg | -55 |  | 150 | ℃ |  | 2 |
| Collector-base breakdown voltage | BVCBO | 80 |  |  | V | IC = 100μA | 2 |
| Collector-emitter breakdown voltage | BVCEO | 80 |  |  | V | IC = 1mA | 2 |
| Emitter-base breakdown voltage | BVEBO | 6 |  |  | V | IE = 100μA | 2 |
| Collector cut-off current | ICBO |  |  | 1 | μA | VCB = 80V | 2 |
| Emitter cut-off current | IEBO |  |  | 1 | μA | VEB = 4V | 2 |
| Collector-emitter saturation voltage | VCE(sat) |  | 100 | 300 | mV | IC = 2A, IB = 100mA | 2 |
| DC current gain | hFE | 120 |  | 390 | - | VCE = 3V, IC = 500mA | 2 |

## CAD (KiCad official)

- Symbol: `2SCR586D3TL1`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files: `2scr586d3tl1-etched.step` / `2scr586d3tl1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2scr586d3tl1.step` / `2scr586d3tl1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588954552238280704) (10 pp, sha256 `529ebe7f2001cdfb`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2scr586d3tl1-datasheet.pdf)