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2SCR573D3TL1

Public Made by Adom

by adom

ROHM Semicon Bipolar Transistors - BJT, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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2SCR573D3TL1

ROHM Semicon · Bipolar Transistors - BJT · TO-252-2

2SCR573D3TL1 from ROHM Semicon, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the NPN transistor; VEBO max 6 V and IEBO max 1 µA at VEB = 4 V.
2 C passive Collector terminal (also the tab); VCEO 50 V, IC 3 A continuous, ICP 6 A pulsed (Pw=10 ms).
3 E passive Emitter terminal of the NPN transistor, connected to the ground or load return side.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TO-252-2
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 50 V Ta = 25°C 2
Collector-emitter voltage VCEO 50 V Ta = 25°C 2
Emitter-base voltage VEBO 6 V Ta = 25°C 2
Collector current IC 3 A Ta = 25°C 2
Collector current (pulse) ICP 6 A Pw=10ms Single Pulse 2
Power dissipation PD 10 W Tc=25℃ 2
Junction temperature Tj 150 ℃ 2
Range of storage temperature Tstg -55 150 ℃ 2
Collector-base breakdown voltage BVCBO 50 V IC = 100μA 2
Collector-emitter breakdown voltage BVCEO 50 V IC = 1mA 2
Emitter-base breakdown voltage BVEBO 6 V IE = 100μA 2
Collector cut-off current ICBO 1 μA VCB = 50V 2
Emitter cut-off current IEBO 1 μA VEB = 4V 2
Collector-emitter saturation voltage VCE(sat) 130 350 mV IC = 1A, IB = 50mA 2
DC current gain hFE 180 450 VCE = 3V, IC = 100mA 2
Transition frequency fT 320 MHz VCE = 10V, IE = -600mA, f = 100MHz 2
Output capacitance Cob 20 pF VCB = 10V, IE = 0A, f = 1MHz 2
Turn-On time ton 70 ns IC = 1.5A, IB1 = 150mA, IB2 = -150mA, VCC ≃ 10V, RL = 6.8Ω 2
Storage time tstg 400 ns IC = 1.5A, IB1 = 150mA, IB2 = -150mA, VCC ≃ 10V, RL = 6.8Ω 2
Fall time tf 120 ns IC = 1.5A, IB1 = 150mA, IB2 = -150mA, VCC ≃ 10V, RL = 6.8Ω 2

CAD (KiCad official)

  • Symbol: 2SCR573D3TL1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: 2scr573d3tl1-etched.step / 2scr573d3tl1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2scr573d3tl1.step / 2scr573d3tl1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (10 pp, sha256 a98499b5c8efc289, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF