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2SCR553PT100

Public Made by Adom

by adom

ROHM Semicon Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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2SCR553PT100

ROHM Semicon · Bipolar Transistors - BJT · SOT-89

2SCR553PT100 from ROHM Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; VEBO max 6V, and IB is 35mA in the VCE(sat) test condition (IC=700mA).
2 C passive Collector (also the tab on the SOT-89 package); VCEO 50V, VCBO 50V, IC 2A continuous and ICP 4A pulsed.
3 E passive Emitter of the NPN transistor; the emitter-base breakdown voltage BVEBO is 6V min at IE=100uA.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage BVCBO 50 V IC = 100μA 2
Collector-emitter breakdown voltage BVCEO 50 V IC = 1mA 2
Emitter-base breakdown voltage BVEBO 6 V IE = 100μA 2
Collector cut-off current ICBO 1 μA VCB = 50V 2
Emitter cut-off current IEBO 1 μA VEB = 4V 2
Collector-emitter saturation voltage VCE(sat) 130 350 mV IC = 700mA, IB = 35mA, pulsed 2
Base-emitter saturation voltage VBE(sat) 0.9 1.3 V IC = 700mA, IB = 35mA, pulsed 2
DC current gain hFE 180 450 VCE = 2V, IC = 50mA 2
Transition frequency fT 360 MHz VCE = 10V, IE = -300mA, f = 100MHz, pulsed 2
Output capacitance Cob 12 pF VCB = 10V, IE = 0A, f = 1MHz 2
Turn-On time ton 45 ns IC = 1A, IB1 = 100mA, IB2 = -100mA, VCC ⋍ 10V, RL = 10Ω 2
Storage time tstg 420 ns IC = 1A, IB1 = 100mA, IB2 = -100mA, VCC ⋍ 10V, RL = 10Ω 2
Fall time tf 75 ns IC = 1A, IB1 = 100mA, IB2 = -100mA, VCC ⋍ 10V, RL = 10Ω 2
Collector-base voltage VCBO 50 V Ta = 25°C 2
Collector-emitter voltage VCEO 50 V Ta = 25°C 2
Emitter-base voltage VEBO 6 V Ta = 25°C 2
Collector current IC 2 A Ta = 25°C 2
Collector current (pulse) ICP 4 A Ta = 25°C, Pw=10ms, Single Pulse 2
Power dissipation PD 0.5 W Ta = 25°C, each terminal mounted on a reference land 2
Power dissipation PD 2 W Ta = 25°C, mounted on a ceramic board (40×40×0.7mm) 2
Junction temperature Tj 150 ℃ Ta = 25°C 2
Range of storage temperature Tstg -55 150 ℃ Ta = 25°C 2

CAD (KiCad official)

  • Symbol: 2SCR553PT100
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2scr553pt100-etched.step / 2scr553pt100-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2scr553pt100.step / 2scr553pt100.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (8 pp, sha256 cbc67be7d36d504b, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF