# 2SC5886A

**TOSHIBA** · Bipolar (BJT) · TO-252

2SC5886A from TOSHIBA, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; drive current IB max 0.5 A, with VEBO max 9 V. |
| 2 | C | passive | Collector (also the heatsink tab); VCBO 120 V, VCEO 50 V, IC 5 A DC and 10 A pulse. |
| 3 | E | passive | Emitter; connected to the circuit's low-side return in NPN switching use, with VEBO max 9 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO |  |  | 120 | V |  | 1 |
| Collector-emitter voltage | VCEX |  |  | 100 | V |  | 1 |
| Collector-emitter voltage | VCEO |  |  | 50 | V |  | 1 |
| Emitter-base voltage | VEBO |  |  | 9 | V |  | 1 |
| Collector current DC | IC |  |  | 5 | A |  | 1 |
| Collector current pulse | ICP |  |  | 10 | A |  | 1 |
| Base current | IB |  |  | 0.5 | A |  | 1 |
| Collector power dissipation | Pc |  |  | 1 | W | Ta = 25°C | 1 |
| Collector power dissipation | Pc |  |  | 20 | W | Tc = 25°C | 1 |
| Junction temperature | Tj |  |  | 150 | °C |  | 1 |
| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 1 |
| Collector cutoff current | ICBO |  |  | 100 | nA | VCB = 120 V, IE = 0 | 2 |
| Emitter cutoff current | IEBO |  |  | 100 | nA | VEB = 9 V, IC = 0 | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | 50 |  |  | V | IC = 10 mA, IB = 0 | 2 |
| DC current gain | hFE(1) | 400 |  | 1000 |  | VCE = 2 V, IC = 0.5 A | 2 |
| DC current gain | hFE(2) | 200 |  |  |  | VCE = 2 V, IC = 1.6 A | 2 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.22 | V | IC = 1.6 A, IB = 32 mA | 2 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1.1 | V | IC = 1.6 A, IB = 32 mA | 2 |

## CAD (KiCad official)

- Symbol: `2SC5886A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `2sc5886a-etched.step` / `2sc5886a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sc5886a.step` / `2sc5886a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588943096025387008) (5 pp, sha256 `677237fafac0b91d`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sc5886a-datasheet.pdf)