component
2SC5876T106R
Public Made by Adomby adom
ROHM Semicon Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| 2sc5876t106r-etched.glb | 6d ago |
| 2sc5876t106r-etched.step | 6d ago |
| 2sc5876t106r-hero.glb | 6d ago |
| 2sc5876t106r-hero.overlay.json | 6d ago |
| 2sc5876t106r.glb | 6d ago |
| 2sc5876t106r.kicad_mod | 6d ago |
| 2sc5876t106r.kicad_sym | 6d ago |
| 2sc5876t106r.lbr | 6d ago |
| 2sc5876t106r.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
2SC5876T106R
ROHM Semicon · Bipolar (BJT) · SOT-323
2SC5876T106R from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter of the NPN transistor; emitter-base breakdown BVEBO is 6V min at IE=100µA. |
| 2 | B | input | Base of the NPN transistor; VEBO max 6V and typical VCE(sat) of 150mV at IC=100mA, IB=10mA. |
| 3 | C | passive | Collector of the NPN transistor; VCEO 60V and IC 500mA (ICP 1.0A at Pw=10ms). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 60 | V | IC = 100μA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | 60 | V | IC = 1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | 6 | V | IE = 100μA | 2 | ||
| Collector cut-off current | ICBO | 1 | μA | VCB = 40V | 2 | ||
| Emitter cut-off current | IEBO | 1 | μA | VEB = 4V | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 150 | 300 | mV | IC = 100mA, IB = 10mA | 2 | |
| DC current gain | hFE | 120 | 390 | - | VCE = 2V, IC = 50mA | 2 | |
| Collector-base voltage | VCBO | 60 | V | 2 | |||
| Collector-emitter voltage | VCEO | 60 | V | 2 | |||
| Emitter-base voltage | VEBO | 6 | V | 2 | |||
| Collector current | IC | 500 | mA | 2 | |||
| Collector current (pulsed) | ICP | 1 | A | Pw=10ms | 2 | ||
| Power dissipation | PD | 200 | mW | Each terminal mounted on a reference land | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
2SC5876T106R - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
2sc5876t106r-etched.step/2sc5876t106r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sc5876t106r.step/2sc5876t106r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (7 pp, sha256
1ab5141f0adaa3e0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).