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2SC5876T106Q

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ROHM Semicon Bipolar Transistors - BJT, SOT-323-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SC5876T106Q

ROHM Semicon · Bipolar Transistors - BJT · SOT-323-3

2SC5876T106Q from ROHM Semicon, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter terminal of the NPN transistor (pin (1) in the inner circuit); VEBO max 6 V.
2 Base passive Base terminal of the NPN transistor (pin (2) in the inner circuit); VEBO max 6 V.
3 Collector passive Collector terminal of the NPN transistor (pin (3) in the inner circuit); VCEO 60 V, IC 500 mA continuous, 1.0 A peak.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-323-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 60 V Ta = 25°C 2
Collector-emitter voltage VCEO 60 V Ta = 25°C 2
Emitter-base voltage VEBO 6 V Ta = 25°C 2
Collector current IC 500 mA Ta = 25°C 2
Collector current (pulsed) ICP 1 A Pw=10ms 2
Power dissipation PD 200 mW Each terminal mounted on a reference land 2
Junction temperature Tj 150 ℃ 2
Storage temperature range Tstg -55 150 ℃ 2
Collector-base breakdown voltage BVCBO 60 V IC = 100μA 2
Collector-emitter breakdown voltage BVCEO 60 V IC = 1mA 2
Emitter-base breakdown voltage BVEBO 6 V IE = 100μA 2
Collector cut-off current ICBO 1 μA VCB = 40V 2
Emitter cut-off current IEBO 1 μA VEB = 4V 2
Collector-emitter saturation voltage VCE(sat) 150 300 mV IC = 100mA, IB = 10mA 2
DC current gain (rank Q) hFE 120 270 VCE = 2V, IC = 50mA; rank Q 2
Transition frequency fT 300 MHz VCE = 10V, IE = -100mA, f = 100MHz; pulsed 2
Output capacitance Cob 5 pF VCB = 10V, IE = 0mA, f = 1MHz 2
Turn-On time ton 70 ns IC = 500mA, IB1 = 50mA, IB2 = -50mA, VCC ≒ 25V, RL = 50Ω; pulsed 2
Storage time tstg 130 ns IC = 500mA, IB1 = 50mA, IB2 = -50mA, VCC ≒ 25V, RL = 50Ω; pulsed 2
Fall time tf 80 ns IC = 500mA, IB1 = 50mA, IB2 = -50mA, VCC ≒ 25V, RL = 50Ω; pulsed 2

CAD (KiCad official)

  • Symbol: 2SC5876T106Q
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323-3 (KiCad packages3D, STEP)
  • 3D model files: 2sc5876t106q-etched.step / 2sc5876t106q-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sc5876t106q.step / 2sc5876t106q.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (7 pp, sha256 91c72a5aeb9f35fc, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF