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Contents

README

markdown

2SC5569-TD-E

onsemi · Bipolar Transistors - BJT · SOT-89

2SC5569-TD-E from onsemi, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base of the NPN transistor; VEBO max 6 V, base current IB max 1.2 A.
2 Collector passive Collector of the NPN transistor; VCBO/VCES 100 V, VCEO 50 V, IC max 7 A (10 A pulse).
3 Emitter passive Emitter of the NPN transistor; VEBO max 6 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-to-Base Voltage VCBO 100 V Ta=25°C 1
Collector-to-Emitter Voltage VCES 100 V Ta=25°C 1
Collector-to-Emitter Voltage VCEO 50 V Ta=25°C 1
Emitter-to-Base Voltage VEBO 6 V Ta=25°C 1
Collector Current IC 7 A Ta=25°C 2
Collector Current (Pulse) ICP 10 A Ta=25°C 2
Base Current IB 1.2 A Ta=25°C 2
Collector Dissipation PC 1.3 W When mounted on ceramic substrate (250mm2×0.8mm) 2
Collector Dissipation PC 3.5 W Tc=25°C 2
Junction Temperature Tj 150 °C 2
Storage Temperature Tstg -55 150 °C 2
Collector Cutoff Current ICBO 0.1 μA VCB=40V, IE=0A 2
Emitter Cutoff Current IEBO 0.1 μA VEB=4V, IC=0A 2
DC Current Gain hFE 200 560 VCE=2V, IC=500mA 2
Collector-to-Emitter Saturation Voltage 1 VCE(sat)1 160 240 mV IC=3.5A, IB=175mA 2
Collector-to-Emitter Saturation Voltage 2 VCE(sat)2 110 170 mV IC=2A, IB=40mA 2
Base-to-Emitter Saturation Voltage VBE(sat) 0.83 1.2 V IC=2A, IB=40mA 2
Collector-to-Base Breakdown Voltage V(BR)CBO 100 V IC=10μA, IE=0A 2
Collector-to-Emitter Breakdown Voltage V(BR)CES 100 V IC=100μA, RBE=0Ω 2
Collector-to-Emitter Breakdown Voltage V(BR)CEO 50 V IC=1mA, RBE=∞ 2
Emitter-to-Base Breakdown Voltage V(BR)EBO 6 V IE=10μA, IC=0A 2
Gain-Bandwidth Product fT 330 MHz VCE=10V, IC=500mA 2
Output Capacitance Cob 28 pF VCB=10V, f=1MHz 2
Turn-On Time ton 30 ns See specified Test Circuit 2
Storage Time tstg 420 ns See specified Test Circuit 2
Fall Time tf 25 ns See specified Test Circuit 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Base Current IB (--)1.2 A Collector Dissipation PC 2

CAD (KiCad official)

  • Symbol: 2SC5569-TD-E
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sc5569-td-e-etched.step / 2sc5569-td-e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sc5569-td-e.step / 2sc5569-td-e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 942890b98b3f0621, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF