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2SC5566-TD-E

Public Made by Adom

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onsemi Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SC5566-TD-E

onsemi · Bipolar (BJT) · SOT-89

2SC5566-TD-E from onsemi, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base passive Base terminal of the NPN transistor; the datasheet gives a base current rating of 600 mA (absolute maximum, device-wide).
2 Collector passive Collector terminal of the NPN transistor; the datasheet rates collector current at 4 A DC and 7 A pulsed (ICP), with collector-to-base voltage of 100 V (device-wide absolute maximums).
3 Emitter passive Emitter terminal of the NPN transistor; the datasheet gives an emitter-to-base voltage rating of 6 V (device-wide absolute maximum).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Cutoff Current ICBO 1 μA VCB=40V, IE=0A 2
Emitter Cutoff Current IEBO 1 μA VEB=4V, IC=0A 2
DC Current Gain hFE 200 560 VCE=2V, IC=500mA 2
Collector-to-Emitter Saturation Voltage VCE(sat)1 85 130 mV IC=1A, IB=50mA 2
Collector-to-Emitter Saturation Voltage VCE(sat)2 150 225 mV IC=2A, IB=100mA 2
Base-to-Emitter Saturation Voltage VBE(sat) 0.89 1.2 V IC=2A, IB=100mA 2
Collector-to-Base Breakdown Voltage V(BR)CBO 100 V IC=10μA, IE=0A 2
Collector-to-Emitter Breakdown Voltage V(BR)CES 100 V IC=100μA, RBE=0Ω 2
Collector-to-Emitter Breakdown Voltage V(BR)CEO 50 V IC=1mA, RBE=∞ 2
Emitter-to-Base Breakdown Voltage V(BR)EBO 6 V IE=10μA, IC=0A 2
Gain-Bandwidth Product fT 400 MHz VCE=10V, IC=500mA 2
Output Capacitance Cob 15 pF VCB=10V, f=1MHz 2
Turn-ON Time ton 35 ns See specified Test Circuit 2
Storage Time tstg 300 ns See specified Test Circuit 2
Fall Time tf 20 ns See specified Test Circuit 2
Collector-to-Base Voltage VCBO 100 V 1
Collector-to-Emitter Voltage VCES 100 V 1
Collector-to-Emitter Voltage VCEO 50 V 1
Emitter-to-Base Voltage VEBO 6 V 1
Collector Current IC 4 A 2
Collector Current (Pulse) ICP 7 A 2
Base Current IB 600 mA 2
Collector Dissipation PC 1.3 W When mounted on ceramic substrate (250mm2×0.8mm) 2
Collector Dissipation PC 3.5 W Tc=25°C 2
Junction Temperature Tj 150 °C 2
Storage Temperature Tstg -55 150 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Base Current IB (--)600 mA Collector Dissipation PC 2

CAD (KiCad official)

  • Symbol: 2SC5566-TD-E
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sc5566-td-e-etched.step / 2sc5566-td-e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sc5566-td-e.step / 2sc5566-td-e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 c919664d9023cadc, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF