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2SC536N

Public Made by Adom

by adom

Changjing Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistor2sc536nfactory-2.0.0extractor-text
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2sc536n-hero.glb 2sc536n: hero GLB from the etched model (keeps the MPN mark) · Ray 2d ago
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2SC536N

Changjing · Bipolar Transistors - BJT · TO-92

2SC536N from Changjing, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER passive Emitter terminal of the NPN transistor; the emitter-base voltage is limited to 6 V (VEBO) and the collector current to 150 mA (IC).
2 COLLECTOR passive Collector terminal of the NPN transistor; the collector-emitter voltage is limited to 50 V (VCEO) and the collector-base voltage to 60 V (VCBO).
3 BASE passive Base terminal of the NPN transistor; the emitter-base voltage is limited to 6 V (VEBO).

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-92
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 60 V 1
Collector-Emitter Voltage VCEO 50 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current IC 150 mA 1
Collector Power Dissipation PC 625 mW 1
Thermal Resistance From Junction To Ambient RθJA 200 ℃/W 1
Operation Junction and Storage Temperature Range TJ,Tstg -55 150 ℃ 1
Collector-base breakdown voltage V(BR)CBO 60 V IC= 0.01mA,IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 50 V IC=1mA,IB=0 2
Emitter-base breakdown voltage V(BR)EBO 6 V IE=0.01mA,IC=0 2
Collector cut-off current ICBO 0.1 μA VCB=40V,IE=0 2
Emitter cut-off current IEBO 0.1 μA VEB=5V,IC=0 2
DC current gain hFE(1) 160 560 VCE=6V, IC=1mA 2
DC current gain hFE(2) 70 VCE=6V, IC=0.1mA 2
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=100mA,IB=10mA 2
Base-emitter saturation voltage VBE (sat) 1 V IC=100mA,IB=10mA 2
Collector output capacitance Cob 3 pF VCE=6V, f=1MHz 2
Transition frequency fT 200 MHz VCE=6V,IC= 10mA 2

CAD (KiCad official)

  • Symbol: 2SC536N
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: 2sc536n-etched.step / 2sc536n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sc536n.step / 2sc536n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (4 pp, sha256 57e5df6b1fef7599, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF