component
2SC5226A-4-TL-E
Public Made by Adomby adom
onsemi Bipolar Transistors - BJT, SC-70. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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2SC5226A-4-TL-E
onsemi · Bipolar Transistors - BJT · SC-70
2SC5226A-4-TL-E from onsemi, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the NPN RF transistor; the datasheet's absolute maximum emitter-to-base voltage VEBO is 2V. |
| 2 | Emitter | passive | Emitter terminal of the NPN RF transistor; the datasheet's absolute maximum emitter-to-base voltage VEBO is 2V. |
| 3 | Collector | passive | Collector terminal of the NPN RF transistor; the datasheet's absolute maximum ratings are VCBO 20V, VCEO 10V and IC 70mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SC-70 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Cutoff Current | ICBO | 1 | μA | VCB=10V, IE=0A | 2 | ||
| Emitter Cutoff Current | IEBO | 10 | μA | VEB=1V, IC=0A | 2 | ||
| DC Current Gain (rank 4) | hFE | 90 | 180 | VCE=5V, IC=20mA | 2 | ||
| Gain-Bandwidth Product | fT | 5 | 7 | GHz | VCE=5V, IC=20mA | 2 | |
| Output Capacitance | Cob | 0.75 | 1.2 | pF | VCB=10V, f=1MHz | 2 | |
| Forward Transfer Gain | /S21e/2 (1) | 9 | 12 | dB | VCE=5V, IC=20mA, f=1GHz | 2 | |
| Noise Figure | NF | 1 | 1.8 | dB | VCE=5V, IC=7mA, f=1GHz | 2 | |
| Collector-to-Base Voltage | VCBO | 20 | V | 1 | |||
| Collector-to-Emitter Voltage | VCEO | 10 | V | 1 | |||
| Emitter-to-Base Voltage | VEBO | 2 | V | 1 | |||
| Collector Current | IC | 70 | mA | 1 | |||
| Collector Dissipation | PC | 150 | mW | 1 | |||
| Junction Temperature | Tj | 150 | °C | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | °C | 1 | ||
| Reverse Transfer Capacitance | Cre | 0.5 | pF | 2 | |||
| Forward Transfer Gain (2) | /S21e/2 (2) | 8 | dB | VCE=2V, IC=3mA, f=1GHz | 2 |
CAD (KiCad official)
- Symbol:
2SC5226A-4-TL-E - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SC-70 (KiCad packages3D, STEP)
- 3D model files:
2sc5226a-4-tl-e-etched.step/2sc5226a-4-tl-e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sc5226a-4-tl-e.step/2sc5226a-4-tl-e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (8 pp, sha256
2a5552631e116daf, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).