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2SC3838KT146N

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ROHM Semicon Bipolar Transistors - BJT, TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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2SC3838KT146N

ROHM Semicon · Bipolar Transistors - BJT · TO-236-3(SOT-23-3)

2SC3838KT146N from ROHM Semicon, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter terminal of the NPN transistor; emitter-base breakdown BVEBO is 3 V minimum at IE = 10 µA (VEBO max 3 V).
2 Base passive Base terminal of the NPN transistor; VEBO max 3 V and hFE 56 to 270 at VCE = 10 V, IC = 5 mA.
3 Collector passive Collector terminal of the NPN transistor; VCEO max 11 V, VCBO max 20 V and IC max 50 mA.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TO-236-3(SOT-23-3)
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 20 V Ta = 25°C 2
Collector-emitter voltage VCEO 11 V Ta = 25°C 2
Emitter-base voltage VEBO 3 V Ta = 25°C 2
Collector current IC 50 mA Ta = 25°C 2
Power dissipation PD 200 mW Each terminal mounted on a reference land, Ta = 25°C 2
Junction temperature Tj 150 ℃ Ta = 25°C 2
Storage temperature range Tstg -55 150 ℃ 2
Collector-base breakdown voltage BVCBO 20 V IC = 10μA 2
Collector-emitter breakdown voltage BVCEO 11 V IC = 1mA 2
Emitter-base breakdown voltage BVEBO 3 V IE = 10μA 2
Collector cut-off current ICBO 500 nA VCB = 10V 2
Emitter cut-off current IEBO 500 nA VEB = 2V 2
Collector-emitter saturation voltage VCE(sat) 500 mV IC = 10mA, IB = 5mA 2
DC current gain hFE 56 270 VCE = 10V, IC = 5mA 2
Transition frequency fT 1.4 3.2 GHz VCE = 10V, IE = -10mA, f = 500MHz 2
Output capacitance Cob 0.8 1.5 pF VCB = 10V, IE = 0A, f = 1MHz 2
Noise figure NF 3.5 dB VCB = 6V, IC = 2mA, f = 500MHz, Rg = 50Ω 2

CAD (KiCad official)

  • Symbol: 2SC3838KT146N
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
  • 3D model files: 2sc3838kt146n-etched.step / 2sc3838kt146n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sc3838kt146n.step / 2sc3838kt146n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (9 pp, sha256 72c17a29443aba45, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF