component
2SC3648T-TD-E
Public Made by Adomby adom
onsemi Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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| 2sc3648t-td-e-etched.step | 2d ago |
| 2sc3648t-td-e-hero.glb | 2d ago |
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| README.md | 2d ago |
2SC3648T-TD-E
onsemi · Bipolar Transistors - BJT · SOT-89
2SC3648T-TD-E from onsemi, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN transistor; the datasheet rates emitter-to-base voltage VEBO at (--)6 V maximum. |
| 2 | Collector | passive | Collector terminal; collector current IC is rated (--)0.7 A with pulse ICP (--)1.5 A, and collector-to-base voltage VCBO is (--)180 V. |
| 3 | Emitter | passive | Emitter terminal, the reference for collector-to-emitter breakdown V(BR)CEO rated (--)160 V minimum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-89 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Cutoff Current | ICBO | 0.1 | μA | VCB=(--)120V, IE=0A | 2 | ||
| Emitter Cutoff Current | IEBO | 0.1 | μA | VEB=(--)4V, IC=0A | 2 | ||
| DC Current Gain (rank T) | hFE1 | 200 | 400 | VCE=(--)5V, IC=(--)100mA; rank T (hFE 200 to 400) | 2 | ||
| DC Current Gain | hFE2 | 90 | VCE=(--)5V, IC=(--)10mA | 2 | |||
| Collector-to-Emitter Saturation Voltage | VCE(sat) | 0.12 | 0.4 | V | IC=(--)250mA, IB=(--)25mA | 2 | |
| Base-to-Emitter Saturation Voltage | VBE(sat) | 0.85 | 1.2 | V | IC=(--)250mA, IB=(--)25mA | 2 | |
| Collector-to-Base Breakdown Voltage | V(BR)CBO | 180 | V | IC=(--)10μA, IE=0A | 2 | ||
| Collector-to-Emitter Breakdown Voltage | V(BR)CEO | 160 | V | IC=(--)1mA, RBE=∞ | 2 | ||
| Emitter-to-Base Breakdown Voltage | V(BR)EBO | 6 | V | IE=(--)10μA, IC=0A | 2 | ||
| Collector-to-Base Voltage | VCBO | 180 | V | 1 | |||
| Collector-to-Emitter Voltage | VCEO | 160 | V | 1 | |||
| Emitter-to-Base Voltage | VEBO | 6 | V | 1 | |||
| Collector Current | IC | 0.7 | A | 1 | |||
| Collector Current (Pulse) | ICP | 1.5 | A | 1 | |||
| Collector Dissipation | PC | 500 | mW | 2 | |||
| Collector Dissipation | PC | 1.3 | W | When mounted on ceramic substrate (250mm2×0.8mm) | 2 | ||
| Junction Temperature | Tj | 150 | °C | 2 | |||
| Storage Temperature | Tstg | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
2SC3648T-TD-E - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sc3648t-td-e-etched.step/2sc3648t-td-e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sc3648t-td-e.step/2sc3648t-td-e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
c04ce2802ce0b7d7, retrieved 2026-11-04, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).