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2SC3647T-TD-E

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-89-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SC3647T-TD-E

onsemi · Bipolar Transistors - BJT · SOT-89-3

2SC3647T-TD-E from onsemi, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the NPN transistor; hFE is classified at VCE = 5 V, IC = 100 mA and VEBO is limited to 6 V.
2 Collector passive Collector terminal (also the tab) of the NPN transistor, rated VCEO 100 V, VCBO 120 V, IC 2 A continuous and 3 A pulsed.
3 Emitter passive Emitter terminal of the NPN transistor, with VEBO rated at 6 V against the base.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-89-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-to-Base Voltage VCBO 120 V TA = 25°C 1
Collector-to-Emitter Voltage VCEO 100 V TA = 25°C 1
Emitter-to-Base Voltage VEBO 6 V TA = 25°C 1
Collector Current IC 2 A TA = 25°C 1
Collector Current (Pulse) ICP 3 A TA = 25°C 1
Collector Dissipation PC 500 mW TA = 25°C 1
Collector Dissipation PC 1.5 W When mounted on ceramic substrate (250 mm2 x 0.8 mm) 1
Junction Temperature Tj 150 °C TA = 25°C 1
Storage Temperature Tstg -55 150 °C TA = 25°C 1
Collector Cutoff Current ICBO 100 nA VCB = 100 V, IE = 0 A 2
Emitter Cutoff Current IEBO 100 nA VEB = 4 V, IC = 0 A 2
DC Current Gain (rank T) hFE 200 400 VCE = 5 V, IC = 100 mA 2
Collector-to-Emitter Saturation Voltage VCE(sat) 0.13 0.4 V IC = 1 A, IB = 100 mA 2
Base-to-Emitter Saturation Voltage VBE(sat) 0.85 1.2 V IC = 1 A, IB = 100 mA 2
Collector-to-Base Breakdown Voltage V(BR)CBO 120 V IC = 10 A, IE = 0 A 2
Collector-to-Emitter Breakdown Voltage V(BR)CEO 100 V IC = 1 mA, RBE = ∞ 2
Emitter-to-Base Breakdown Voltage V(BR)EBO 6 V IE = 10 A, IC = 0 A 2
Gain-Bandwidth Product fT 120 MHz VCE = 10 V, IC = 100 mA 2
Output Capacitance Cob 16 pF VCB = 10 V, f = 1 MHz 2
Turn-On Time ton 80 ns See specified Test Circuit. 2
Storage Time tstg 1000 ns See specified Test Circuit. 2
Fall Time tf 50 ns See specified Test Circuit. 2

CAD (KiCad official)

  • Symbol: 2SC3647T-TD-E
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89-3 (KiCad packages3D, STEP)
  • 3D model files: 2sc3647t-td-e-etched.step / 2sc3647t-td-e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sc3647t-td-e.step / 2sc3647t-td-e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 dd9cc25a8c2ed863, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF