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2SC3647S-TD-E

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ON Semiconductor Bipolar Transistors - BJT, SOT-89-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SC3647S-TD-E

ON Semiconductor · Bipolar Transistors - BJT · SOT-89-3

2SC3647S-TD-E from ON Semiconductor, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base of the NPN transistor; VEBO max 6 V, with IC up to 2 A set by IB (hFE 100 to 400 at VCE=5 V, IC=100 mA).
2 Collector passive Collector of the NPN transistor; VCBO 120 V, VCEO 100 V, IC 2 A continuous and 3 A pulsed.
3 Emitter passive Emitter of the NPN transistor, normally connected to the circuit ground or common return.

Key specifications

Parameter Value
Manufacturer ON Semiconductor
Package SOT-89-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Cutoff Current ICBO 100 nA VCB=100V, IE=0A 2
Emitter Cutoff Current IEBO 100 nA VEB=4V, IC=0A 2
DC Current Gain hFE 100 400 VCE=5V, IC=100mA 2
Collector-to-Emitter Saturation Voltage VCE(sat) 0.13 0.4 V IC=1A, IB=100mA 2
Base-to-Emitter Saturation Voltage VBE(sat) 0.85 1.2 V IC=1A, IB=100mA 2
Collector-to-Base Breakdown Voltage V(BR)CBO 120 V IC=10μA, IE=0A 2
Collector-to-Emitter Breakdown Voltage V(BR)CEO 100 V IC=1mA, RBE=∞ 2
Emitter-to-Base Breakdown Voltage V(BR)EBO 6 V IE=10μA, IC=0A 2
Collector-to-Base Voltage VCBO 120 V Ta=25°C 1
Collector-to-Emitter Voltage VCEO 100 V Ta=25°C 1
Emitter-to-Base Voltage VEBO 6 V Ta=25°C 1
Collector Current IC 2 A Ta=25°C 1
Collector Current (Pulse) ICP 3 A Ta=25°C 1
Collector Dissipation PC 500 mW Ta=25°C 1
Collector Dissipation (ceramic substrate) PC 1.5 W When mounted on ceramic substrate (250mm2×0.8mm) 1
Junction Temperature Tj 150 °C Ta=25°C 1
Storage Temperature Tstg -55 150 °C Ta=25°C 1
Gain-Bandwidth Product fT 120 MHz VCE=10V, IC=100mA 2
Output Capacitance Cob 16 pF VCB=10V, f=1MHz 2
Turn-On Time ton 80 ns See specified Test Circuit 2
Storage Time tstg 1000 ns See specified Test Circuit 2
Fall Time tf 50 ns See specified Test Circuit 2

CAD (KiCad official)

  • Symbol: 2SC3647S-TD-E
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89-3 (KiCad packages3D, STEP)
  • 3D model files: 2sc3647s-td-e-etched.step / 2sc3647s-td-e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sc3647s-td-e.step / 2sc3647s-td-e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ON Semiconductor datasheet (7 pp, sha256 bf0561a8a826fe6d, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF