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2SC3647G-S-AB3-R

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UTC(Unisonic Tech) Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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2SC3647G-S-AB3-R

UTC(Unisonic Tech) · Bipolar (BJT) · SOT-89

2SC3647G-S-AB3-R from UTC(Unisonic Tech), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the NPN transistor; the datasheet specifies base drive via IB = 100 mA for the test point IC = 1 A (VBE(SAT) max 1.2 V).
2 C passive Collector terminal; maximum ratings are VCBO 120 V, VCEO 100 V and continuous collector current IC 2 A (pulse ICP 3 A).
3 E passive Emitter terminal; maximum emitter-to-base voltage VEBO is 6 V.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Emitter Voltage VCEO 100 V TA = 25°C, unless otherwise specified 2
Collector to Base Voltage VCBO 120 V TA = 25°C, unless otherwise specified 2
Emitter to Base Voltage VEBO 6 V TA = 25°C, unless otherwise specified 2
Collector Current IC 2 A TA = 25°C, unless otherwise specified 2
Collector Current (Pulse) ICP 3 A TA = 25°C, unless otherwise specified 2
Collector Dissipation PC 500 mW TA = 25°C, unless otherwise specified 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -40 150 °C 2
Collector-Base Breakdown Voltage BVCBO 120 V IC = 10μA, IE = 0 2
Collector-Emitter Breakdown Voltage BVCEO 100 V IC = 1mA, RBE = ∞ 2
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 10μA, IC = 0 2
Collector Cutoff Current ICBO 100 nA VCB = 100V, IE = 0 2
Emitter Cutoff Current IEBO 100 nA VEB = 4V, IC = 0 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.13 0.4 V IC = 1A, IB = 100mA 2
Base-Emitter Saturation Voltage VBE(SAT) 0.85 1.2 V IC = 1A, IB = 100mA 2
DC Current Gain (rank S, 140 ~ 280) hFE 140 280 VCE = 5V, IC = 100mA 2
Output Capacitance Cob 16 pF VCB = 10V, f = 1MHz 2
Turn-ON Time tON 80 ns See specified Test Circuit. 2
Storage Time tSTG 1000 ns See specified Test Circuit. 2
Fall Time tF 50 ns See specified Test Circuit. 2
Gain-Bandwidth Product fT 120 MHz VCE = 10V, IC = 100mA 2

CAD (KiCad official)

  • Symbol: 2SC3647G-S-AB3-R
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sc3647g-s-ab3-r-etched.step / 2sc3647g-s-ab3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sc3647g-s-ab3-r.step / 2sc3647g-s-ab3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (5 pp, sha256 1cd448117dc102e6, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF