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2SC3647G-R-AB3-R

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UTC(Unisonic Tech) Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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2SC3647G-R-AB3-R

UTC(Unisonic Tech) · Bipolar (BJT) · SOT-89

2SC3647G-R-AB3-R from UTC(Unisonic Tech), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the NPN transistor; the datasheet rates emitter-to-base voltage VEBO at 6 V and gives VBE(SAT) of 0.85 V typ and 1.2 V max at IC = 1 A, IB = 100 mA.
2 C passive Collector terminal; the datasheet rates VCBO at 120 V, VCEO at 100 V, collector current IC at 2 A and pulse current ICP at 3 A, with collector dissipation PC of 500 mW.
3 E passive Emitter terminal; the datasheet gives VEBO of 6 V and an emitter cutoff current IEBO of 100 nA max at VEB = 4 V.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain (rank R, per classification table) hFE 100 200 VCE = 5V, IC = 100mA 2
Collector-Base Breakdown Voltage BVCBO 120 V IC = 10μA, IE = 0 2
Collector-Emitter Breakdown Voltage BVCEO 100 V IC = 1mA, RBE = ∞ 2
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 10μA, IC = 0 2
Collector Cutoff Current ICBO 100 nA VCB = 100V, IE = 0 2
Emitter Cutoff Current IEBO 100 nA VEB = 4V, IC = 0 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.13 0.4 V IC = 1A, IB = 100mA 2
Base-Emitter Saturation Voltage VBE(SAT) 0.85 1.2 V IC = 1A, IB = 100mA 2
Output Capacitance Cob 16 pF VCB = 10V, f = 1MHz 2
Turn-ON Time tON 80 ns See specified Test Circuit. 2
Storage Time tSTG 1000 ns See specified Test Circuit. 2
Fall Time tF 50 ns See specified Test Circuit. 2
Gain-Bandwidth Product fT 120 MHz VCE = 10V, IC = 100mA 2
Collector-Base Voltage VCBO 120 V TA = 25°C, unless otherwise specified 2
Collector to Emitter Voltage VCEO 100 V TA = 25°C, unless otherwise specified 2
Emitter to Base Voltage VEBO 6 V TA = 25°C, unless otherwise specified 2
Collector Current IC 2 A TA = 25°C, unless otherwise specified 2
Collector Current (Pulse) ICP 3 A TA = 25°C, unless otherwise specified 2
Collector Dissipation PC 500 mW TA = 25°C, unless otherwise specified 2
Junction Temperature TJ 150 °C TA = 25°C, unless otherwise specified 2
Storage Temperature TSTG -40 150 °C TA = 25°C, unless otherwise specified 2

CAD (KiCad official)

  • Symbol: 2SC3647G-R-AB3-R
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sc3647g-r-ab3-r-etched.step / 2sc3647g-r-ab3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sc3647g-r-ab3-r.step / 2sc3647g-r-ab3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (5 pp, sha256 1cd448117dc102e6, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF