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2SC3646T-TD-E

Public Made by Adom

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onsemi Bipolar Transistors - BJT, SOT-89-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SC3646T-TD-E

onsemi · Bipolar Transistors - BJT · SOT-89-3

2SC3646T-TD-E from onsemi, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base passive Base terminal of the 2SC3646 NPN transistor, with emitter-to-base voltage VEBO rated 6 V max.
2 Collector passive Collector terminal, rated for collector current IC 1 A (pulse ICP 2 A), with VCBO 120 V and VCEO 100 V.
3 Emitter passive Emitter terminal of the NPN transistor, with emitter-to-base voltage VEBO rated 6 V max.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-89-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Cutoff Current ICBO 100 nA VCB = (-)100 V, IE = 0 A 2
Emitter Cutoff Current IEBO 100 nA VEB = (-)4V, IC = 0 A 2
DC Current Gain (rank T) hFE 200 400 VCE = (-)5 V, IC = (-)100 mA, rank T 2
DC Current Gain hFE 100 400 VCE = (-)5 V, IC = (-)100 mA 2
Collector to Emitter Saturation Voltage VCE(sat) 0.1 0.4 V IC = (-)400 mA, IB = (-)40 mA 2
Base to Emitter Saturation Voltage VBE(sat) 0.85 1.2 V IC = (-)400 mA, IB = (-)−40 mA 2
Collector to Base Breakdown Voltage V(BR)CBO 120 V IC = (-)10 A, IE = 0 A 2
Collector to Emitter Breakdown Voltage V(BR)CEO 100 V IC = (-)1 mA, RBE = ∞ 2
Emitter to Base Breakdown Voltage V(BR)EBO 6 V IE = (-)10 A, IC = 0 A 2
Collector to Base Voltage VCBO 120 V 1
Collector to Emitter Voltage VCEO 100 V 1
Emitter to Base Voltage VEBO 6 V 1
Collector Current IC 1 A 1
Collector Current (Pulse) ICP 2 A 1
Collector Dissipation PC 500 mW 1
Collector Dissipation (Note 1) PC 1.3 W Surface mounted on ceramic substrate (250 mm2 x 0.8 mm) 1
Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1

CAD (KiCad official)

  • Symbol: 2SC3646T-TD-E
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89-3 (KiCad packages3D, STEP)
  • 3D model files: 2sc3646t-td-e-etched.step / 2sc3646t-td-e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sc3646t-td-e.step / 2sc3646t-td-e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 8aacc5137f179cb8, retrieved 2026-10-29, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF