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2SC3356G-B-AE2-R

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UTC Unisonic Tech Bipolar (BJT), SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SC3356G-B-AE2-R

UTC Unisonic Tech · Bipolar (BJT) · SOT-23-3

2SC3356G-B-AE2-R from UTC Unisonic Tech, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base of the 2SC3356 NPN transistor; the datasheet's absolute maximum emitter-to-base voltage is BVEBO 3 V, and the device must not be operated beyond the absolute maximum ratings listed.
2 E passive Emitter of the 2SC3356 NPN transistor; the datasheet gives no separate emitter limit beyond the absolute maximum ratings (collector current 100 mA, power dissipation 200 mW for SOT-23-3).
3 C passive Collector of the 2SC3356 NPN transistor; the absolute maximum collector-to-emitter voltage is BVCEO 12 V and collector-to-base voltage is BVCBO 20 V.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Voltage BVCBO 20 V 2
Collector to Emitter Voltage BVCEO 12 V 2
Emitter to Base Voltage BVEBO 3 V 2
Collector Current IC 100 mA 2
Power Dissipation (SOT-23-3 / SOT-23 package) PD 200 mW 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -65 150 °C 2
Collector to Base Breakdown Voltage BVCBO 20 V IC=10μA, IE=0 2
Collector to Emitter Breakdown Voltage BVCEO 12 V IC=1mA, RBE=∞ 2
Emitter to Base Breakdown Voltage BVEBO 3 V IE=10μA, IC=0 2
Collector-Base Cut-Off Current ICBO 1 μA VCB =10V, IE =0 2
Emitter-Base Cut-Off Current IEBO 1 μA VEB =1 V, IC=0 2
DC Current Gain hFE 50 300 VCE =10 V, IC =20 mA 2
DC Current Gain, Rank B range (classification) hFE 160 300 2
Feed-Back Capacitance CRE 1 pF VCB =10 V, IE =0, f =1.0MHz 2
Noise Figure NF 2 dB VCE =10 V, IC =7mA, f =1.0GHz 2
Gain Bandwidth Product fT 7 GHz VCE =10 V, IC =20 mA 2

CAD (KiCad official)

  • Symbol: 2SC3356G-B-AE2-R
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: 2sc3356g-b-ae2-r-etched.step / 2sc3356g-b-ae2-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sc3356g-b-ae2-r.step / 2sc3356g-b-ae2-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (4 pp, sha256 7a54a34bd049d7ce, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF