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2SC2712-Y
Public Made by Adomby adom
Slkor SLKORMICRO Elec Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SC2712-Y
Slkor SLKORMICRO Elec · Bipolar (BJT) · SOT-23
2SC2712-Y from Slkor SLKORMICRO Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN transistor, with a maximum base current IB of 30 mA and a base-emitter saturation voltage VBE(sat) of 1.2 V max at IC = 100 mA, IB = 10 mA. |
| 2 | Emitter | passive | Emitter terminal of the NPN transistor, with an emitter-base breakdown voltage VEBO of 5 V min and an emitter cut-off current IEBO of 100 nA max at VEB = 5 V. |
| 3 | Collector | passive | Collector terminal of the NPN transistor, rated for VCBO = 60 V, VCEO = 50 V, and IC = 150 mA max, with a collector power dissipation PC of 150 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | VCBO | 60 | V | Ic= 100 μA, IE= 0 | 1 | ||
| Collector-emitter breakdown voltage | VCEO | 50 | V | Ic= 1 mA, IB= 0 | 1 | ||
| Emitter-base breakdown voltage | VEBO | 5 | V | IE= 100μA, IC= 0 | 1 | ||
| Collector-base cut-off current | ICBO | 100 | nA | VCB= 60 V, IE= 0 | 1 | ||
| Emitter cut-off current | IEBO | 100 | nA | VEB= 5V, IC=0 | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.25 | V | IC=100 mA, IB=10mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=100 mA, IB=10mA | 1 | ||
| DC current gain (Y rank, per hFE classification 120-240) | hFE | 120 | 240 | VCE= 6V, IC= 2mA | 1 | ||
| Noise figure | NF | 1 | 10 | dB | VCE = 6 V, IC = 0.1 mA, f = 1KHz, RG=10KΩ | 1 | |
| Collector output capacitance | Cob | 2 | 3.5 | pF | VCB= 10V, IE= 0, f=1MHz | 1 | |
| Transition frequency | fT | 80 | MHz | VCE= 10V, IC= 1mA | 1 | ||
| Collector-base voltage | VCBO | 60 | V | Ta = 25 | 1 | ||
| Collector-emitter voltage | VCEO | 50 | V | Ta = 25 | 1 | ||
| Emitter-base voltage | VEBO | 5 | V | Ta = 25 | 1 | ||
| Collector current | IC | 150 | mA | Ta = 25 | 1 | ||
| Base current | IB | 30 | mA | Ta = 25 | 1 | ||
| Collector power dissipation | PC | 150 | mW | Ta = 25 | 1 | ||
| Junction temperature | Tj | 125 | °C | 1 | |||
| Storage temperature range | Tstg | -55 | 125 | °C | 1 |
CAD (KiCad official)
- Symbol:
2SC2712-Y - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2sc2712-y-etched.step/2sc2712-y-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sc2712-y.step/2sc2712-y.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Slkor SLKORMICRO Elec datasheet (3 pp, sha256
48912c8ecc937985, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SC2712-Y
**Slkor SLKORMICRO Elec** · Bipolar (BJT) · SOT-23
2SC2712-Y from Slkor SLKORMICRO Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN transistor, with a maximum base current IB of 30 mA and a base-emitter saturation voltage VBE(sat) of 1.2 V max at IC = 100 mA, IB = 10 mA. |
| 2 | Emitter | passive | Emitter terminal of the NPN transistor, with an emitter-base breakdown voltage VEBO of 5 V min and an emitter cut-off current IEBO of 100 nA max at VEB = 5 V. |
| 3 | Collector | passive | Collector terminal of the NPN transistor, rated for VCBO = 60 V, VCEO = 50 V, and IC = 150 mA max, with a collector power dissipation PC of 150 mW. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | VCBO | 60 | | | V | Ic= 100 μA, IE= 0 | 1 |
| Collector-emitter breakdown voltage | VCEO | 50 | | | V | Ic= 1 mA, IB= 0 | 1 |
| Emitter-base breakdown voltage | VEBO | 5 | | | V | IE= 100μA, IC= 0 | 1 |
| Collector-base cut-off current | ICBO | | | 100 | nA | VCB= 60 V, IE= 0 | 1 |
| Emitter cut-off current | IEBO | | | 100 | nA | VEB= 5V, IC=0 | 1 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.25 | V | IC=100 mA, IB=10mA | 1 |
| Base-emitter saturation voltage | VBE(sat) | | | 1.2 | V | IC=100 mA, IB=10mA | 1 |
| DC current gain (Y rank, per hFE classification 120-240) | hFE | 120 | | 240 | | VCE= 6V, IC= 2mA | 1 |
| Noise figure | NF | | 1 | 10 | dB | VCE = 6 V, IC = 0.1 mA, f = 1KHz, RG=10KΩ | 1 |
| Collector output capacitance | Cob | | 2 | 3.5 | pF | VCB= 10V, IE= 0, f=1MHz | 1 |
| Transition frequency | fT | 80 | | | MHz | VCE= 10V, IC= 1mA | 1 |
| Collector-base voltage | VCBO | | | 60 | V | Ta = 25 | 1 |
| Collector-emitter voltage | VCEO | | | 50 | V | Ta = 25 | 1 |
| Emitter-base voltage | VEBO | | | 5 | V | Ta = 25 | 1 |
| Collector current | IC | | | 150 | mA | Ta = 25 | 1 |
| Base current | IB | | | 30 | mA | Ta = 25 | 1 |
| Collector power dissipation | PC | | | 150 | mW | Ta = 25 | 1 |
| Junction temperature | Tj | | | 125 | °C | | 1 |
| Storage temperature range | Tstg | -55 | | 125 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `2SC2712-Y`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `2sc2712-y-etched.step` / `2sc2712-y-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sc2712-y.step` / `2sc2712-y.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Slkor SLKORMICRO Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590229837073330176) (3 pp, sha256 `48912c8ecc937985`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sc2712-y-datasheet.pdf)