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2SC2712-GR

Public Made by Adom

by adom

TOSHIBA Bipolar (BJT), TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SC2712-GR

TOSHIBA · Bipolar (BJT) · TO-236-3(SOT-23-3)

2SC2712-GR from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the NPN transistor; the datasheet gives a base current rating of IB 30 mA max and an emitter-base voltage rating VEBO of 5 V in the absolute maximum table.
2 Emitter passive Emitter terminal of the NPN transistor; the emitter-base voltage limit is VEBO 5 V in the absolute maximum table.
3 Collector passive Collector terminal of the NPN transistor; the limits are VCBO 60 V, VCEO 50 V and collector current IC 150 mA max.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package TO-236-3(SOT-23-3)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 60 V 2
Emitter-base voltage VEBO 5 V 2
Collector current (DC) IC 150 mA 2
Base current IB 30 mA 2
Collector power dissipation (LF-suffix devices, Note 2) PC 200 mW Note 2 (LF-suffix devices); Note 4: device mounted on 25.4 mm x 25.4 mm x 1.6 mm FR4 glass epoxy board (Cu pad 0.8 mm2 x 3) 2
Collector power dissipation (XGF/XHF-suffix devices, Note 3) PC 150 mW Note 3 (XGF/XHF-suffix devices) 2
Junction temperature (LF-suffix devices, Note 2) Tj 150 °C Note 2 (LF-suffix devices) 2
Junction temperature (XGF/XHF-suffix devices, Note 3) Tj 125 °C Note 3 (XGF/XHF-suffix devices) 2
Storage temperature (LF-suffix devices, Note 2) Tstg -55 150 °C Note 2 (LF-suffix devices) 2
Storage temperature (XGF/XHF-suffix devices, Note 3) Tstg -55 125 °C Note 3 (XGF/XHF-suffix devices) 2
Collector cut-off current ICBO 0.1 µA VCB = 60 V, IE = 0 mA 3
Emitter cut-off current IEBO 0.1 µA VEB = 5 V, IC = 0 mA 3
DC current gain (GR classification) hFE 200 400 VCE = 6 V, IC = 2 mA 3
Collector-emitter saturation voltage VCE(sat) 0.1 0.25 V IC = 100 mA, IB = 10 mA 3
Transition frequency fT 80 MHz VCE = 10 V, IC = 1 mA 3
Collector output capacitance Cob 2 3.5 pF VCB = 10 V, IE = 0 A, f = 1 MHz 3
Noise figure NF 1 10 dB VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 kΩ 3

CAD (KiCad official)

  • Symbol: 2SC2712-GR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
  • 3D model files: 2sc2712-gr-etched.step / 2sc2712-gr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sc2712-gr.step / 2sc2712-gr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (7 pp, sha256 02d9425ad94950a9, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF