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2SB834L-Y-TN3-R
Public Made by Adomby adom
UTC(Unisonic Tech) Bipolar Transistors - BJT, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SB834L-Y-TN3-R
UTC(Unisonic Tech) · Bipolar Transistors - BJT · TO-252
2SB834L-Y-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; VEBO max -7 V and base current IB max -0.5 A. |
| 2 | C | passive | Collector; VCBO and VCEO max -60 V, collector current IC max -3 A. |
| 3 | E | passive | Emitter of the PNP transistor; VEBO max -7 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -60 | V | 3 | |||
| Collector-Emitter Voltage | VCEO | -60 | V | 3 | |||
| Emitter-Base Voltage | VEBO | -7 | V | 3 | |||
| Collector Current | IC | -3 | A | 3 | |||
| Base Current | IB | -0.5 | A | 3 | |||
| Power Dissipation TO-252 | PD | 26 | W | TC=25°C, TO-252 | 3 | ||
| Junction Temperature | TJ | 125 | °C | 3 | |||
| Storage Temperature | TSTG | -40 | 150 | °C | 3 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | -60 | V | IC=-50mA | 3 | ||
| Collector Cut-Off Current | ICBO | -100 | μA | VCB=-60V | 3 | ||
| Emitter Cut-Off Current | IEBO | -100 | μA | VEB=-7V | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -1 | V | IC=-3A, IB=0.3A | 3 | ||
| Base-Emitter On Voltage | VBE(ON) | -0.7 | -1 | V | VCE=-5V, IC=-0.5A | 3 | |
| DC Current Gain 1 | hFE1 | 100 | 200 | IC=-0.5A, VCE=-5V; rank Y | 3 | ||
| DC Current Gain 2 | hFE2 | 20 | IC=-3A, VCE=-5V | 3 | |||
| Current Gain Bandwidth Product | fT | 9 | MHZ | VCE=-5V, IC=-0.5A | 3 |
CAD (KiCad official)
- Symbol:
2SB834L-Y-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
2sb834l-y-tn3-r-etched.step/2sb834l-y-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb834l-y-tn3-r.step/2sb834l-y-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (5 pp, sha256
c6111e1b185bf773, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SB834L-Y-TN3-R
**UTC(Unisonic Tech)** · Bipolar Transistors - BJT · TO-252
2SB834L-Y-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; VEBO max -7 V and base current IB max -0.5 A. |
| 2 | C | passive | Collector; VCBO and VCEO max -60 V, collector current IC max -3 A. |
| 3 | E | passive | Emitter of the PNP transistor; VEBO max -7 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | | | -60 | V | | 3 |
| Collector-Emitter Voltage | VCEO | | | -60 | V | | 3 |
| Emitter-Base Voltage | VEBO | | | -7 | V | | 3 |
| Collector Current | IC | | | -3 | A | | 3 |
| Base Current | IB | | | -0.5 | A | | 3 |
| Power Dissipation TO-252 | PD | | | 26 | W | TC=25°C, TO-252 | 3 |
| Junction Temperature | TJ | | | 125 | °C | | 3 |
| Storage Temperature | TSTG | -40 | | 150 | °C | | 3 |
| Collector-Emitter Breakdown Voltage | BVCEO | -60 | | | V | IC=-50mA | 3 |
| Collector Cut-Off Current | ICBO | | | -100 | μA | VCB=-60V | 3 |
| Emitter Cut-Off Current | IEBO | | | -100 | μA | VEB=-7V | 3 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | -1 | V | IC=-3A, IB=0.3A | 3 |
| Base-Emitter On Voltage | VBE(ON) | | -0.7 | -1 | V | VCE=-5V, IC=-0.5A | 3 |
| DC Current Gain 1 | hFE1 | 100 | | 200 | | IC=-0.5A, VCE=-5V; rank Y | 3 |
| DC Current Gain 2 | hFE2 | 20 | | | | IC=-3A, VCE=-5V | 3 |
| Current Gain Bandwidth Product | fT | | 9 | | MHZ | VCE=-5V, IC=-0.5A | 3 |
## CAD (KiCad official)
- Symbol: `2SB834L-Y-TN3-R`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `2sb834l-y-tn3-r-etched.step` / `2sb834l-y-tn3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sb834l-y-tn3-r.step` / `2sb834l-y-tn3-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC(Unisonic Tech) datasheet](docs/2sb834l-y-tn3-r-datasheet.pdf) (5 pp, sha256 `c6111e1b185bf773`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sb834l-y-tn3-r-datasheet.pdf)