component
2SB806
Public Made by Adomby adom
Shikues Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SB806
Shikues · Bipolar (BJT) · SOT-89
2SB806 from Shikues, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | base | passive | Base terminal of the PNP transistor, driven with a base current of -50 mA for the stated saturation test conditions (IC = -500 mA, IB = -50 mA); the emitter-base voltage is rated VEBO = -5 V. |
| 2 | collector | passive | Collector terminal of the PNP transistor, rated for VCBO = -120 V and VCEO = -120 V, with a pulsed collector current ICM of -1.2 A. |
| 3 | emitter | passive | Emitter terminal of the PNP transistor, referenced to the base at VEBO = -5 V maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -120 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -120 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current -Continuous (PULSE) | ICM | -1.2 | A | PULSE | 1 | ||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Collector cut-off current | ICBO | -100 | nA | VCB=-120V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -100 | nA | VEB=-5V, IC=0 | 1 | ||
| DC current gain | hFE | 90 | 400 | VCE=-1V, IC=-100mA | 1 | ||
| DC current gain | hFE | 45 | 200 | VCE=-1V, IC=-5mA | 1 | ||
| Base-Emitter saturation voltage | VBE(sat) | -1.5 | V | IC=-500mA, IB=-50mA | 1 | ||
| Output capacitance | Cob | 14 | pF | VCB=-10V, IE=0, f=1MHz | 1 |
CAD (KiCad official)
- Symbol:
2SB806 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sb806-etched.step/2sb806-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb806.step/2sb806.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shikues datasheet (2 pp, sha256
d8ddbf1e0692899c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SB806
**Shikues** · Bipolar (BJT) · SOT-89
2SB806 from Shikues, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | base | passive | Base terminal of the PNP transistor, driven with a base current of -50 mA for the stated saturation test conditions (IC = -500 mA, IB = -50 mA); the emitter-base voltage is rated VEBO = -5 V. |
| 2 | collector | passive | Collector terminal of the PNP transistor, rated for VCBO = -120 V and VCEO = -120 V, with a pulsed collector current ICM of -1.2 A. |
| 3 | emitter | passive | Emitter terminal of the PNP transistor, referenced to the base at VEBO = -5 V maximum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | | | -120 | V | | 1 |
| Collector-Emitter Voltage | VCEO | | | -120 | V | | 1 |
| Emitter-Base Voltage | VEBO | | | 5 | V | | 1 |
| Collector Current -Continuous (PULSE) | ICM | | | -1.2 | A | PULSE | 1 |
| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Junction Temperature | Tj | | | 150 | ℃ | | 1 |
| Collector cut-off current | ICBO | | | -100 | nA | VCB=-120V, IE=0 | 1 |
| Emitter cut-off current | IEBO | | | -100 | nA | VEB=-5V, IC=0 | 1 |
| DC current gain | hFE | 90 | | 400 | | VCE=-1V, IC=-100mA | 1 |
| DC current gain | hFE | 45 | | 200 | | VCE=-1V, IC=-5mA | 1 |
| Base-Emitter saturation voltage | VBE(sat) | | | -1.5 | V | IC=-500mA, IB=-50mA | 1 |
| Output capacitance | Cob | | | 14 | pF | VCB=-10V, IE=0, f=1MHz | 1 |
## CAD (KiCad official)
- Symbol: `2SB806`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `2sb806-etched.step` / `2sb806-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sb806.step` / `2sb806.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shikues datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757069186445664256) (2 pp, sha256 `d8ddbf1e0692899c`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sb806-datasheet.pdf)