component
2SB804
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Shikues Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SB804
Shikues · Bipolar Transistors - BJT · SOT-89
2SB804 from Shikues, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the PNP transistor; base saturation voltage VBE(sat) is -0.9 V typ and -1.5 V max at IC=-500mA, IB=-50mA. |
| 2 | Collector | passive | Collector of the PNP transistor; VCBO -100 V, VCEO -80 V, continuous IC -1.0 A. |
| 3 | Emitter | passive | Emitter of the PNP transistor; VEBO is -5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -100 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -80 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current -Continuous | IC | -1 | A | Continuous | 1 | ||
| Collector Power Dissipation | PC | 1 | W | TA=25℃ | 1 | ||
| Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB=-100V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -100 | nA | VEB=-5V, IE=0 | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.29 | -0.5 | V | IC=-500mA, IB=-50mA | 1 | |
| Base saturation voltage | VBE(sat) | -0.9 | -1.5 | V | IC=-500mA, IB=-50mA | 1 | |
| Base emitter voltage | VBE | -600 | -640 | -700 | mV | VCE=-10V, IC=-10mA | 1 |
| DC current gain | hFE | 90 | 200 | 400 | VCE=-2V, IC=-100mA | 1 | |
| DC current gain | hFE | 25 | 80 | VCE=-2V, IC=-500mA | 1 | ||
| Transition frequency | fT | 80 | MHz | VCE =-5 V, IE=10 mA | 1 | ||
| Output capacitance | Cob | 26 | pF | VCE =-10 V, IE=0 mA, f=1.0MHz | 1 |
CAD (KiCad official)
- Symbol:
2SB804 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sb804-etched.step/2sb804-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb804.step/2sb804.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shikues datasheet (2 pp, sha256
7b33e9871e6efe2a, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SB804
**Shikues** · Bipolar Transistors - BJT · SOT-89
2SB804 from Shikues, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the PNP transistor; base saturation voltage VBE(sat) is -0.9 V typ and -1.5 V max at IC=-500mA, IB=-50mA. |
| 2 | Collector | passive | Collector of the PNP transistor; VCBO -100 V, VCEO -80 V, continuous IC -1.0 A. |
| 3 | Emitter | passive | Emitter of the PNP transistor; VEBO is -5 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | | | -100 | V | | 1 |
| Collector-Emitter Voltage | VCEO | | | -80 | V | | 1 |
| Emitter-Base Voltage | VEBO | | | -5 | V | | 1 |
| Collector Current -Continuous | IC | | | -1 | A | Continuous | 1 |
| Collector Power Dissipation | PC | | | 1 | W | TA=25℃ | 1 |
| Junction Temperature | Tj | | | 150 | ℃ | | 1 |
| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Collector cut-off current | ICBO | | | -100 | nA | VCB=-100V, IE=0 | 1 |
| Emitter cut-off current | IEBO | | | -100 | nA | VEB=-5V, IE=0 | 1 |
| Collector-emitter saturation voltage | VCE(sat) | | -0.29 | -0.5 | V | IC=-500mA, IB=-50mA | 1 |
| Base saturation voltage | VBE(sat) | | -0.9 | -1.5 | V | IC=-500mA, IB=-50mA | 1 |
| Base emitter voltage | VBE | -600 | -640 | -700 | mV | VCE=-10V, IC=-10mA | 1 |
| DC current gain | hFE | 90 | 200 | 400 | | VCE=-2V, IC=-100mA | 1 |
| DC current gain | hFE | 25 | 80 | | | VCE=-2V, IC=-500mA | 1 |
| Transition frequency | fT | 80 | | | MHz | VCE =-5 V, IE=10 mA | 1 |
| Output capacitance | Cob | | 26 | | pF | VCE =-10 V, IE=0 mA, f=1.0MHz | 1 |
## CAD (KiCad official)
- Symbol: `2SB804`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `2sb804-etched.step` / `2sb804-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sb804.step` / `2sb804.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shikues datasheet](docs/2sb804-datasheet.pdf) (2 pp, sha256 `7b33e9871e6efe2a`, retrieved 2026-10-31, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sb804-datasheet.pdf)