component
2SB799
Public Made by Adomby adom
Shikues Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SB799
Shikues · Bipolar Transistors - BJT · SOT-89
2SB799 from Shikues, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet gives emitter-base breakdown voltage V(BR)EBO of -6 V (IE=-100µA, IC=0). |
| 2 | C | passive | Collector of the PNP transistor; collector-emitter breakdown voltage V(BR)CEO is -25 V and collector-base breakdown voltage V(BR)CBO is -40 V. |
| 3 | E | passive | Emitter of the PNP transistor, with emitter-base breakdown voltage V(BR)EBO of -6 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -40 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -25 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -6 | V | 1 | |||
| Collector Current - Continuous | IC | -1.5 | A | 1 | |||
| Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-100µA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -25 | V | IC=-2mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -6 | V | IE=-100µA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB=-35V, IE=0 | 1 | ||
| DC current gain | hFE | 200 | 300 | VCE=-1V, IC=-100mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-800mA, IB=-80mA | 1 |
CAD (KiCad official)
- Symbol:
2SB799 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sb799-etched.step/2sb799-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb799.step/2sb799.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shikues datasheet (2 pp, sha256
81fcbfdca149f545, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SB799
**Shikues** · Bipolar Transistors - BJT · SOT-89
2SB799 from Shikues, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet gives emitter-base breakdown voltage V(BR)EBO of -6 V (IE=-100µA, IC=0). |
| 2 | C | passive | Collector of the PNP transistor; collector-emitter breakdown voltage V(BR)CEO is -25 V and collector-base breakdown voltage V(BR)CBO is -40 V. |
| 3 | E | passive | Emitter of the PNP transistor, with emitter-base breakdown voltage V(BR)EBO of -6 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | | | -40 | V | | 1 |
| Collector-Emitter Voltage | VCEO | | | -25 | V | | 1 |
| Emitter-Base Voltage | VEBO | | | -6 | V | | 1 |
| Collector Current - Continuous | IC | | | -1.5 | A | | 1 |
| Junction Temperature | Tj | | | 150 | ℃ | | 1 |
| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Collector-base breakdown voltage | V(BR)CBO | -40 | | | V | IC=-100µA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | -25 | | | V | IC=-2mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | -6 | | | V | IE=-100µA, IC=0 | 1 |
| Collector cut-off current | ICBO | | | -100 | nA | VCB=-35V, IE=0 | 1 |
| DC current gain | hFE | 200 | | 300 | | VCE=-1V, IC=-100mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) | | | -0.5 | V | IC=-800mA, IB=-80mA | 1 |
## CAD (KiCad official)
- Symbol: `2SB799`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `2sb799-etched.step` / `2sb799-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sb799.step` / `2sb799.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shikues datasheet](docs/2sb799-datasheet.pdf) (2 pp, sha256 `81fcbfdca149f545`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sb799-datasheet.pdf)