component
2SB798
Public Made by Adomby adom
Shikues Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SB798
Shikues · Bipolar Transistors - BJT · SOT-89
2SB798 from Shikues, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the PNP transistor; emitter-base breakdown voltage V(BR)EBO is -6 V and base current of -80 mA is used for the IC=-800 mA saturation test. |
| 2 | Collector | passive | Collector of the PNP transistor; VCEO is -25 V, VCBO is -30 V and continuous collector current is rated -1.0 A. |
| 3 | Emitter | passive | Emitter of the PNP transistor; emitter-base breakdown voltage V(BR)EBO is -6 V (IE=-100 µA, IC=0). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -30 | V | TA=25℃ | 1 | ||
| Collector-Emitter Voltage | VCEO | -25 | V | TA=25℃ | 1 | ||
| Emitter-Base Voltage | VEBO | -6 | V | TA=25℃ | 1 | ||
| Collector Current -Continuous | IC | -1 | A | TA=25℃ | 1 | ||
| Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | -30 | V | IC=-100µA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -25 | V | IC=-2mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -6 | V | IE=-100µA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB=-35V, IE=0 | 1 | ||
| DC current gain (DL) | hFE | 135 | 270 | VCE=-1V, IC=-100mA; marking DL | 1 | ||
| DC current gain (DK) | hFE | 200 | 400 | VCE=-1V, IC=-100mA; marking DK | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-800mA, IB=-80mA | 1 | ||
| Transition frequency | fT | 200 | MHz | VCE=10V, IE=50 mA, f=100MHz | 1 |
CAD (KiCad official)
- Symbol:
2SB798 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sb798-etched.step/2sb798-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb798.step/2sb798.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shikues datasheet (3 pp, sha256
0075a6b257403b11, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).