component
2SB776
Public Made by Adomby adom
Changjing Bipolar Transistors - BJT, TO-126. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 3d ago |
| viewers | 3d ago |
| 2sb776-etched.glb | 3d ago |
| 2sb776-etched.step | 3d ago |
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| 2sb776-hero.overlay.json | 3d ago |
| 2sb776.glb | 3d ago |
| 2sb776.kicad_mod | 3d ago |
| 2sb776.kicad_sym | 3d ago |
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| 2sb776.step | 3d ago |
| package.json | 3d ago |
| page.json | 3d ago |
| README.md | 3d ago |
2SB776
Changjing · Bipolar Transistors - BJT · TO-126
2SB776 from Changjing, in a TO-126. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter of the PNP transistor; the datasheet gives no emitter-specific limit, and the emitter-base voltage VEBO is -5 V with collector current IC -3 A continuous. |
| 2 | COLLECTOR | passive | Collector of the PNP transistor; the maximum ratings give VCBO -50 V, VCEO -50 V and collector current IC -3 A continuous. |
| 3 | BASE | passive | Base of the PNP transistor; the datasheet gives no base-specific limit, and saturation is tested at IC -2 A with IB -200 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-126 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -50 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -50 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current Continuous | IC | -3 | A | 1 | |||
| Collector Power Dissipation | PC | 1 | W | 1 | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | -50 | V | IC=-100µA,IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -50 | V | IC=-5mA,IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-100µA,IC=0 | 2 | ||
| Collector cut-off current | ICBO | -1 | µA | VCB=-50V,IE=0 | 2 | ||
| Emitter cut-off current | IEBO | -1 | µA | VEB=-3V,IC=0 | 2 | ||
| DC current gain hFE(1) | hFE(1) | 100 | VCE=-2V,IC=-20mA | 2 | |||
| DC current gain hFE(2) | hFE(2) | 100 | 400 | VCE=-2V,IC=-1A | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-2A,IB=-200mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | -2 | V | IC=-2A,IB=-200mA | 2 | ||
| Transition frequency | fT | 80 | MHz | VCE=-5V,IC=-100mA | 2 | ||
| Collector output capacitance | Cob | 45 | pF | VCB=-10V,IE=0,f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
2SB776 - Footprint:
Package_TO_SOT_THT:TO-126-3_Vertical - 3D model: TO-126 (KiCad packages3D, STEP)
- 3D model files:
2sb776-etched.step/2sb776-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb776.step/2sb776.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (3 pp, sha256
87c01f0d45602954, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).