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2SB772SG-P-AB3-R
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UTC Unisonic Tech Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SB772SG-P-AB3-R
UTC Unisonic Tech · Bipolar (BJT) · SOT-89
2SB772SG-P-AB3-R from UTC Unisonic Tech, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the PNP transistor, with absolute maximum base current IB of -0.6 A and emitter-base voltage VEBO of -5 V. |
| 2 | C | passive | Collector terminal, with absolute maximum DC collector current IC of -3 A (peak ICP -7 A), VCBO of -40 V and VCEO of -30 V. |
| 3 | E | passive | Emitter terminal, with emitter-base breakdown voltage BVEBO of -5 V at IE=-100 µA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -40 | V | IC=-100μA, IE=0 | 2 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | -30 | V | IC=-1mA, IB=0 | 2 | ||
| Emitter-Base Breakdown Voltage | BVEBO | -5 | V | IE=-100μA, IC=0 | 2 | ||
| Collector Cut-Off Current | ICBO | -1000 | nA | VCB=-30V, IE=0 | 2 | ||
| Emitter Cut-Off Current | IEBO | -1000 | nA | VEB=-3V, IC=0 | 2 | ||
| DC Current Gain (hFE1) | hFE1 | 30 | 200 | VCE=-2V, IC=-20mA | 2 | ||
| DC Current Gain (hFE2) | hFE2 | 100 | 150 | 400 | VCE=-2V, IC=-1A | 2 | |
| DC Current Gain, rank P range (classification of hFE2) | hFE2 | 160 | 320 | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -0.3 | -0.5 | V | IC=-2A, IB=-0.2A | 2 | |
| Base-Emitter Saturation Voltage | VBE(SAT) | -1 | -2 | V | IC=-2A, IB=-0.2A | 2 | |
| Current Gain Bandwidth Product | fT | 80 | MHz | VCE=-5V, IC=-0.1A | 2 | ||
| Output Capacitance | COB | 45 | pF | VCB=-10V, IE=0, f=1MHz | 2 | ||
| Collector-Base Voltage | VCBO | -40 | V | TA=25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | -30 | V | TA=25°C | 2 | ||
| Emitter-Base Voltage | VEBO | -5 | V | TA=25°C | 2 | ||
| Peak Collector Current | ICP | -7 | A | TA=25°C | 2 | ||
| DC Collector Current | IC | -3 | A | TA=25°C | 2 | ||
| Base Current | IB | -0.6 | A | TA=25°C | 2 | ||
| Power Dissipation, SOT-89 | PD | 0.5 | W | TA=25°C, SOT-89 package | 2 | ||
| Junction Temperature | TJ | 150 | °C | 2 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
2SB772SG-P-AB3-R - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sb772sg-p-ab3-r-etched.step/2sb772sg-p-ab3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb772sg-p-ab3-r.step/2sb772sg-p-ab3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (3 pp, sha256
1153215574111b11, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SB772SG-P-AB3-R
**UTC Unisonic Tech** · Bipolar (BJT) · SOT-89
2SB772SG-P-AB3-R from UTC Unisonic Tech, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the PNP transistor, with absolute maximum base current IB of -0.6 A and emitter-base voltage VEBO of -5 V. |
| 2 | C | passive | Collector terminal, with absolute maximum DC collector current IC of -3 A (peak ICP -7 A), VCBO of -40 V and VCEO of -30 V. |
| 3 | E | passive | Emitter terminal, with emitter-base breakdown voltage BVEBO of -5 V at IE=-100 µA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -40 | | | V | IC=-100μA, IE=0 | 2 |
| Collector-Emitter Breakdown Voltage | BVCEO | -30 | | | V | IC=-1mA, IB=0 | 2 |
| Emitter-Base Breakdown Voltage | BVEBO | -5 | | | V | IE=-100μA, IC=0 | 2 |
| Collector Cut-Off Current | ICBO | | | -1000 | nA | VCB=-30V, IE=0 | 2 |
| Emitter Cut-Off Current | IEBO | | | -1000 | nA | VEB=-3V, IC=0 | 2 |
| DC Current Gain (hFE1) | hFE1 | 30 | 200 | | | VCE=-2V, IC=-20mA | 2 |
| DC Current Gain (hFE2) | hFE2 | 100 | 150 | 400 | | VCE=-2V, IC=-1A | 2 |
| DC Current Gain, rank P range (classification of hFE2) | hFE2 | 160 | | 320 | | | 2 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | -0.3 | -0.5 | V | IC=-2A, IB=-0.2A | 2 |
| Base-Emitter Saturation Voltage | VBE(SAT) | | -1 | -2 | V | IC=-2A, IB=-0.2A | 2 |
| Current Gain Bandwidth Product | fT | 80 | | | MHz | VCE=-5V, IC=-0.1A | 2 |
| Output Capacitance | COB | | | 45 | pF | VCB=-10V, IE=0, f=1MHz | 2 |
| Collector-Base Voltage | VCBO | | | -40 | V | TA=25°C | 2 |
| Collector-Emitter Voltage | VCEO | | | -30 | V | TA=25°C | 2 |
| Emitter-Base Voltage | VEBO | | | -5 | V | TA=25°C | 2 |
| Peak Collector Current | ICP | | | -7 | A | TA=25°C | 2 |
| DC Collector Current | IC | | | -3 | A | TA=25°C | 2 |
| Base Current | IB | | | -0.6 | A | TA=25°C | 2 |
| Power Dissipation, SOT-89 | PD | | | 0.5 | W | TA=25°C, SOT-89 package | 2 |
| Junction Temperature | TJ | | | 150 | °C | | 2 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 2 |
## CAD (KiCad official)
- Symbol: `2SB772SG-P-AB3-R`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `2sb772sg-p-ab3-r-etched.step` / `2sb772sg-p-ab3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sb772sg-p-ab3-r.step` / `2sb772sg-p-ab3-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586194529465094144) (3 pp, sha256 `1153215574111b11`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sb772sg-p-ab3-r-datasheet.pdf)