component
2SB766A
Public Made by Adomby adom
Changjiang Electronics Tech (CJ) Bipolar Transistors - BJT, SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 1d ago |
| viewers | 1d ago |
| 2sb766a-etched.glb | 1d ago |
| 2sb766a-etched.step | 1d ago |
| 2sb766a-hero.glb | 1d ago |
| 2sb766a-hero.overlay.json | 1d ago |
| 2sb766a.glb | 1d ago |
| 2sb766a.kicad_mod | 1d ago |
| 2sb766a.kicad_sym | 1d ago |
| 2sb766a.lbr | 1d ago |
| 2sb766a.step | 1d ago |
| package.json | 1d ago |
| page.json | 1d ago |
| README.md | 1d ago |
2SB766A
Changjiang Electronics Tech (CJ) · Bipolar Transistors - BJT · SOT-89-3L
2SB766A from Changjiang Electronics Tech (CJ), in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor; the datasheet specifies VBE(sat) of -0.85 V (min) to -1.2 V (max) at IC=-500mA, IB=-50mA, and VEBO of -5 V. |
| 2 | COLLECTOR | passive | Collector terminal; the datasheet limits are VCBO -60 V, VCEO -50 V, continuous IC -1 A, and collector power dissipation PC 500 mW. |
| 3 | EMITTER | passive | Emitter terminal; the datasheet limits the emitter-base voltage to VEBO -5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | SOT-89-3L |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -60 | V | Ic=-10μA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -50 | V | Ic=-2mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-10μA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | -0.1 | μA | VCB=-20V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -0.1 | μA | VEB=-4V,IC=0 | 1 | ||
| DC current gain hFE(1) | hFE(1) | 85 | 340 | VCE=-10V,IC=-500mA | 1 | ||
| DC current gain hFE(2) | hFE(2) | 50 | VCE=-5V,IC=-1A | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.2 | -0.4 | V | IC=-500mA,IB=-50mA | 1 | |
| Base-emitter saturation voltage | VBE(sat) | -0.85 | -1.2 | V | IC=-500mA,IB=-50mA | 1 | |
| Transition frequency | fT | 200 | MHz | VCE=-10V,IC=-50mA,f=200MHz | 1 | ||
| Collector output capacitance | Cob | 20 | 30 | pF | VCB=-10V,IE=0,f=1MHz | 1 | |
| Collector-base voltage | VCBO | -60 | V | 1 | |||
| Collector-emitter voltage | VCEO | -50 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current, continuous | IC | -1 | A | 1 | |||
| Collector power dissipation | PC | 500 | mW | 1 | |||
| Junction temperature | TJ | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | 1 |
CAD (KiCad official)
- Symbol:
2SB766A - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files:
2sb766a-etched.step/2sb766a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb766a.step/2sb766a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjiang Electronics Tech (CJ) datasheet (1 pp, sha256
12906a00d66e6d44, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).