# 2SB649AG-C-TN3-R

**UTC Unisonic Tech** · Bipolar (BJT) · TO-252-2(DPAK)

2SB649AG-C-TN3-R from UTC Unisonic Tech, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the PNP transistor; the datasheet's TO-252 pin assignment places base on pin 1 (ordering table, B C E), and the emitter-base breakdown voltage is rated at VEBO -5 V. |
| 2 | C | passive | Collector terminal; the datasheet's TO-252 pin assignment places collector on pin 2, with maximum collector current IC -1.5 A and peak collector current -3 A. |
| 3 | E | passive | Emitter terminal; the datasheet's TO-252 pin assignment places emitter on pin 3, with collector-emitter voltage limited to -120 V (2SB649) or -160 V (2SB649A). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252-2(DPAK) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Base Breakdown Voltage | BVCBO | -180 |  |  | V | IC=-1mA, IE=0 | 3 |
| Collector to Emitter Breakdown Voltage (2SB649A) | BVCEO | -160 |  |  | V | IC=-10mA, RBE= | 3 |
| Emitter to Base Breakdown Voltage | BVEBO | -5 |  |  | V | IE=-1mA, IC=0 | 3 |
| Collector Cut-off Current | ICBO |  |  | -10 | μA | VCB=-160V, IE=0 | 3 |
| DC Current Gain (2SB649A) | hFE1 | 60 |  | 200 |  | VCE=-5V, IC=-150mA (note) | 3 |
| DC Current Gain (2SB649A) | hFE2 | 30 |  |  |  | VCE=-5V, IC=-500mA (note) | 3 |
| Collector-Emitter Saturation Voltage | VCE(SAT) |  |  | -1 | V | IC=-600mA, IB=-50mA | 3 |
| Base-Emitter Voltage | VBE |  |  | -1.5 | V | VCE=-5V, IC=-150mA | 3 |
| Current Gain Bandwidth Product | fT | 140 |  |  | MHz | VCE=-5V, IC=-150mA | 3 |
| Output Capacitance | Cob |  | 27 |  | pF | VCB=-10V, IE=0, f=1MHz | 3 |
| Collector Current | IC |  |  | -1.5 | A |  | 3 |
| Collector Peak Current | IC(PEAK) |  |  | -3 | A |  | 3 |
| Collector-Base Voltage | VCBO |  |  | -180 | V |  | 3 |
| Collector-Emitter Voltage (2SB649A) | VCEO |  |  | -160 | V |  | 3 |
| Emitter-Base Voltage | VEBO |  |  | -5 | V |  | 3 |
| Power Dissipation | PD |  |  | 2 | W | TO-252 package | 3 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 3 |
| Storage Temperature | TSTG | -40 |  | 150 | °C |  | 3 |
| Junction to Case Thermal Resistance | θJC |  | 4.5 |  | °C/W | TO-252 | 3 |

## CAD (KiCad official)

- Symbol: `2SB649AG-C-TN3-R`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files: `2sb649ag-c-tn3-r-etched.step` / `2sb649ag-c-tn3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sb649ag-c-tn3-r.step` / `2sb649ag-c-tn3-r.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586179299187965952) (5 pp, sha256 `d5c719de64ed4d88`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sb649ag-c-tn3-r-datasheet.pdf)