component
2SB649AG-C-AB3-R
Public Made by Adomby adom
UTC(Unisonic Tech) Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SB649AG-C-AB3-R
UTC(Unisonic Tech) · Bipolar Transistors - BJT · SOT-89
2SB649AG-C-AB3-R from UTC(Unisonic Tech), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet lists pin 1 as B for the SOT-89 (-AB3) package. |
| 2 | C | passive | Collector of the PNP transistor, rated VCBO -180 V, VCEO -120 V (2SB649) or -160 V (2SB649A), IC -1.5 A continuous and -3 A peak. |
| 3 | E | passive | Emitter of the PNP transistor, with VEBO rated at -5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -180 | V | TA=25°C | 3 | ||
| Collector-Emitter Voltage (2SB649A) | VCEO | -160 | V | TA=25°C | 3 | ||
| Emitter-Base Voltage | VEBO | -5 | V | TA=25°C | 3 | ||
| Collector Current | IC | -1.5 | A | TA=25°C | 3 | ||
| Collector Peak Current | IC(PEAK) | -3 | A | TA=25°C | 3 | ||
| Power Dissipation SOT-89 | PD | 0.5 | W | SOT-89, TA=25°C | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -40 | 150 | °C | 3 | ||
| Thermal Resistance Junction to Case SOT-89 | θJC | 38 | °C/W | SOT-89 | 3 | ||
| Collector to Base Breakdown Voltage | BVCBO | -180 | V | IC=-1mA, IE=0 | 3 | ||
| Collector to Emitter Breakdown Voltage (2SB649A) | BVCEO | -160 | V | IC=-10mA, RBE=∞ | 3 | ||
| Emitter to Base Breakdown Voltage | BVEBO | -5 | V | IE=-1mA, IC=0 | 3 | ||
| Collector Cut-off Current | ICBO | -10 | μA | VCB=-160V, IE=0 | 3 | ||
| DC Current Gain 1 (2SB649A) | hFE1 | 60 | 200 | VCE=-5V, IC=-150mA (pulse test) | 3 | ||
| DC Current Gain 1, rank C | hFE1 | 100 | 200 | Rank C classification | 3 | ||
| DC Current Gain 2 (2SB649A) | hFE2 | 30 | VCE=-5V, IC=-500mA (pulse test) | 3 | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -1 | V | IC=-600mA, IB=-50mA | 3 | ||
| Base-Emitter Voltage | VBE | -1.5 | V | VCE=-5V, IC=-150mA | 3 | ||
| Current Gain Bandwidth Product | fT | 140 | MHz | VCE=-5V, IC=-150mA | 3 | ||
| Output Capacitance | Cob | 27 | pF | VCB=-10V, IE=0, f=1MHz | 3 |
CAD (KiCad official)
- Symbol:
2SB649AG-C-AB3-R - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sb649ag-c-ab3-r-etched.step/2sb649ag-c-ab3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb649ag-c-ab3-r.step/2sb649ag-c-ab3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (5 pp, sha256
d5c719de64ed4d88, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).