component
2SB647A
Public Made by Adomby adom
JSMSEMI Bipolar (BJT), TO-92L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| 2sb647a-etched.glb | 6d ago |
| 2sb647a-etched.step | 6d ago |
| 2sb647a-hero.glb | 6d ago |
| 2sb647a-hero.overlay.json | 6d ago |
| 2sb647a.glb | 6d ago |
| 2sb647a.kicad_mod | 6d ago |
| 2sb647a.kicad_sym | 6d ago |
| 2sb647a.lbr | 6d ago |
| 2sb647a.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
2SB647A
JSMSEMI · Bipolar (BJT) · TO-92L
2SB647A from JSMSEMI, in a TO-92L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter of the PNP transistor; maximum emitter-base voltage is -5 V. |
| 2 | C | passive | Collector of the PNP transistor; VCBO -120 V, VCEO -80 V, IC max -1 A. |
| 3 | B | passive | Base of the PNP transistor; the base-emitter voltage is specified at up to -1.5 V (VCE=-5V, IC=-150mA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-92L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -120 | V | IC=-10µA,IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -80 | V | IC=-1mA,IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-10µA,IC=0 | 2 | ||
| Collector cut-off current | ICBO | -10 | μA | VCB=-100V,IE=0 | 2 | ||
| DC current gain hFE(1) | hFE(1) | 60 | 320 | VCE=-5V, IC=-150mA | 2 | ||
| DC current gain hFE(2) | hFE(2) | 30 | VCE=-5V, IC=-500mA | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | -1 | V | IC=-500mA,IB=-50mA | 2 | ||
| Base-emitter voltage | VBE | -1.5 | V | VCE=-5V, IC=-150mA | 2 | ||
| Collector output capacitance | Cob | 20 | pF | VCB=-10V,IE=0, f=1MHz | 2 | ||
| Transition frequency | fT | 140 | MHz | VCE=-5V,IC=-150mA | 2 | ||
| Collector-base voltage | VCBO | -120 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Collector-emitter voltage | VCEO | -80 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Emitter-base voltage | VEBO | -5 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Collector current | IC | -1 | A | Ta=25℃ unless otherwise noted | 1 | ||
| Collector power dissipation | PC | 750 | mW | Ta=25℃ unless otherwise noted | 1 | ||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 167 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
2SB647A - Footprint:
Package_TO_SOT_THT:TO-92 - 3D model: TO-92L (KiCad packages3D, STEP)
- 3D model files:
2sb647a-etched.step/2sb647a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb647a.step/2sb647a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (3 pp, sha256
8c85c2c6d10f7f55, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).