# 2SB624-BV4

**KEXIN** · Bipolar (BJT) · SOT-23

2SB624-BV4 from KEXIN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the PNP transistor; the datasheet rates emitter-base voltage VEBO at -5 V maximum and gives VBE(sat) of -1.2 V maximum at IC=-700 mA, IB=-70 mA. |
| 2 | Emitter | passive | Emitter terminal of the PNP transistor; the emitter-base breakdown voltage is -5 V minimum at IE=-100 µA, and the absolute maximum emitter-base voltage is -5 V. |
| 3 | Collector | passive | Collector terminal of the PNP transistor; rated for VCBO -30 V, VCEO -25 V, continuous collector current IC -700 mA and collector power dissipation PC 200 mW at Ta=25℃. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | KEXIN |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | VCBO | -30 |  |  | V | Ic= -100 μA, IE=0 | 1 |
| Collector-emitter breakdown voltage | VCEO | -25 |  |  | V | Ic= -1 mA, IB=0 | 1 |
| Emitter-base breakdown voltage | VEBO | -5 |  |  | V | IE= -100μA, IC=0 | 1 |
| Collector-base cut-off current | ICBO |  |  | -100 | nA | VCB= -30 V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | -100 | nA | VEB= -5V, IC=0 | 1 |
| Collector-emitter saturation voltage (Note.1) | VCE(sat) |  |  | -0.6 | V | IC=-700 mA, IB=-70mA | 1 |
| Base-emitter saturation voltage (Note.1) | VBE(sat) |  |  | -1.2 | V | IC=-700 mA, IB=-70mA | 1 |
| Base-emitter voltage (Note.1) | VBE | -0.6 |  | -0.7 | V | VCE= -6V, IC= -10mA | 1 |
| DC current gain hFE(1) | hFE(1) | 110 |  | 400 |  | VCE= -1V, IC= -100mA | 1 |
| DC current gain hFE(1) classification, 2SB624-BV4 range | hFE(1) | 200 |  | 320 |  |  | 1 |
| DC current gain hFE(2) | hFE(2) | 50 |  |  |  | VCE=- 1V, IC= -700mA | 1 |
| Collector output capacitance | Cob |  |  | 17 | pF | VCB= -6V, IE= 0, f=1MHz | 1 |
| Transition frequency | fT | 160 |  |  | MHz | VCE= -6V, IC= -10mA | 1 |
| Collector-base voltage | VCBO |  |  | -30 | V | Ta = 25℃ | 1 |
| Collector-emitter voltage | VCEO |  |  | -25 | V | Ta = 25℃ | 1 |
| Emitter-base voltage | VEBO |  |  | -5 | V | Ta = 25℃ | 1 |
| Collector current, continuous | IC |  |  | -700 | mA | Ta = 25℃ | 1 |
| Collector power dissipation | PC |  |  | 200 | mW | Ta = 25℃ | 1 |
| Junction temperature | TJ |  |  | 150 | ℃ |  | 1 |
| Storage temperature range | Tstg | -55 |  | 150 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `2SB624-BV4`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `2sb624-bv4-etched.step` / `2sb624-bv4-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sb624-bv4.step` / `2sb624-bv4.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [KEXIN datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588904709973553152) (1 pp, sha256 `31755dc32f429713`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sb624-bv4-datasheet.pdf)