component

2SB5540SQ

Public Made by Adom

by adom

PJSEMI Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristors2sb5540sqfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

2SB5540SQ

PJSEMI · Bipolar (BJT) · SOT-89

2SB5540SQ from PJSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the 2SB5540SQ PNP transistor, with emitter-base voltage rated at -VEBO 6 V maximum and emitter-base cutoff current specified at VEB = -4 V.
2 Collector passive Collector terminal of the PNP transistor, rated for -VCBO 40 V and -VCEO 40 V, with continuous collector current -IC 3 A and pulsed collector current -ICP 5 A.
3 Emitter passive Emitter terminal of the PNP transistor, referenced by the emitter-base breakdown voltage -V(BR)EBO of 6 V minimum at IE = -100 μA.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain (VCE = -2 V, IC = -0.5 A) HFE 250 , at VCE = -2 V, IC = -0.5 A 2
DC Current Gain (VCE = -2 V, IC = -1 A) HFE 200 , at VCE = -2 V, IC = -1 A 2
DC Current Gain (VCE = -2 V, IC = -2 A) HFE 150 , at VCE = -2 V, IC = -2 A 2
DC Current Gain (VCE = -2 V, IC = -5 A) HFE 50 , at VCE = -2 V, IC = -5 A 2
Collector Base Cutoff Current -ICBO 500 nA at VCB = -20 V 2
Emitter Base Cutoff Current -IEBO 500 nA at VEB = -4 V 2
Collector Base Breakdown Voltage -V(BR)CBO 40 V at IC = -100 μA 2
Collector Emitter Breakdown Voltage -V(BR)CEO 40 V at IC = -1 mA 2
Emitter Base Breakdown Voltage -V(BR)EBO 6 V at IE = -100 μA 2
Collector Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) -VCE(sat) 0.13 V at IC = -500 mA, IB = -50 mA 2
Collector Emitter Saturation Voltage (IC = -1 A, IB = -100 mA) -VCE(sat) 0.15 V at IC = -1 A, IB = -100 mA 2
Collector Emitter Saturation Voltage (IC = -2 A, IB = -200 mA) -VCE(sat) 0.16 V at IC = -2 A, IB = -200 mA 2
Collector Emitter Saturation Voltage (IC = -4 A, IB = -400 mA) -VCE(sat) 0.34 V at IC = -4 A, IB = -400 mA 2
Collector Emitter Saturation Voltage (IC = -5 A, IB = -500 mA) -VCE(sat) 0.375 V at IC = -5 A, IB = -500 mA 2
Base Emitter Saturation Voltage (IC = -2 A, IB = -200 mA) -VBE(sat) 1.15 V at IC = -2 A, IB = -200 mA 2
Base Emitter Saturation Voltage (IC = -4 A, IB = -400 mA) -VBE(sat) 1.2 V at IC = -4 A, IB = -400 mA 2
Base Emitter Saturation Voltage (IC = -5 A, IB = -500 mA) -VBE(sat) 1.25 V at IC = -5 A, IB = -500 mA 2
Base Emitter On Voltage -VBE(on) 1 V at VCE = -2 V, IC = -2 A 2
Transition Frequency FT 60 MHz at VCE = -5 V, IC = -100 mA, f = 100 MHz 2
Output Capacitance Cob 105 pF at VCB = -10 V, IE = 0, f = 1 MHz 2
Collector Base Voltage -VCBO 40 V 1
Collector Emitter Voltage -VCEO 40 V 1
Emitter Base Voltage -VEBO 6 V 1
Collector Current -IC 3 A 1
Pulsed Collector Current -ICP 5 A 1
Maximum Power Dissipation PD 500 mW 1
Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1

CAD (KiCad official)

  • Symbol: 2SB5540SQ
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sb5540sq-etched.step / 2sb5540sq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sb5540sq.step / 2sb5540sq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (7 pp, sha256 2f1030d70beab52b, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF