component
2SB1695KT146
Public Made by Adomby adom
ROHM Semicon Bipolar Transistors - BJT, TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 3d ago |
| viewers | 3d ago |
| 2sb1695kt146-etched.glb | 3d ago |
| 2sb1695kt146-etched.step | 3d ago |
| 2sb1695kt146-hero.glb | 3d ago |
| 2sb1695kt146-hero.overlay.json | 3d ago |
| 2sb1695kt146.glb | 3d ago |
| 2sb1695kt146.kicad_mod | 3d ago |
| 2sb1695kt146.kicad_sym | 3d ago |
| 2sb1695kt146.lbr | 3d ago |
| 2sb1695kt146.step | 3d ago |
| package.json | 3d ago |
| page.json | 3d ago |
| README.md | 3d ago |
2SB1695KT146
ROHM Semicon · Bipolar Transistors - BJT · TO-236-3(SOT-23-3)
2SB1695KT146 from ROHM Semicon, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter of the PNP transistor; VEBO max -6 V and IEBO max -100 nA at VEB = -6 V. |
| 2 | B | passive | Base of the PNP transistor; VCE(sat) max -370 mV at IC = -1 A and IB = -50 mA. |
| 3 | C | passive | Collector of the PNP transistor; VCEO -30 V, IC -1.5 A continuous and ICP -3 A pulsed (Pw = 1 ms). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-236-3(SOT-23-3) |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | -30 | V | IC = -10μA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | -30 | V | IC = -1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | -6 | V | IE = -10μA | 2 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB = -30V | 2 | ||
| Emitter cut-off current | IEBO | -100 | nA | VEB = -6V | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -200 | -370 | mV | IC = -1A, IB = -50mA, pulsed | 2 | |
| DC current gain | hFE | 270 | 680 | VCE = -2V, IC = -100mA | 2 | ||
| Transition frequency | fT | 280 | MHz | VCE = -2V, IE = 100mA, f = 100MHz | 2 | ||
| Output capacitance | Cob | 13 | pF | VCB = -10V, IE = 0A, f = 1MHz | 2 | ||
| Collector-base voltage | VCBO | -30 | V | Ta = 25°C | 2 | ||
| Collector-emitter voltage | VCEO | -30 | V | Ta = 25°C | 2 | ||
| Emitter-base voltage | VEBO | -6 | V | Ta = 25°C | 2 | ||
| Collector current | IC | -1.5 | A | Ta = 25°C | 2 | ||
| Collector current (pulsed) | ICP | -3 | A | Pw=1ms Single Pulse | 2 | ||
| Power dissipation | PD | 200 | mW | Each terminal mounted on a reference land | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
2SB1695KT146 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
- 3D model files:
2sb1695kt146-etched.step/2sb1695kt146-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb1695kt146.step/2sb1695kt146.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (9 pp, sha256
83adf3cb33496e84, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).