component
2SB1689T106
Public Made by Adomby adom
ROHM Semicon Bipolar Transistors - BJT, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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2SB1689T106
ROHM Semicon · Bipolar Transistors - BJT · SOT-323
2SB1689T106 from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter of the PNP transistor; VEBO is limited to -6V and emitter-base breakdown BVEBO is -6V min at IE=-10μA. |
| 2 | Base | passive | Base of the PNP transistor; drive with IB=-25mA for VCE(sat) of -200mV max at IC=-500mA. |
| 3 | Collector | passive | Collector of the PNP transistor; VCEO is -12V and VCBO is -15V, with IC of -1.5A continuous and ICP of -3.0A (1ms single pulse). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-323 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | -15 | V | IC = -10μA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | -12 | V | IC = -1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | -6 | V | IE = -10μA | 2 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB = -15V | 2 | ||
| Emitter cut-off current | IEBO | -100 | nA | VEB = -6V | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -110 | -200 | mV | IC = -500mA, IB = -25mA | 2 | |
| DC current gain | hFE | 270 | 680 | - | VCE = -2V, IC = -200mA; pulse measurement | 2 | |
| Collector-base voltage | VCBO | -15 | V | Ta = 25°C | 2 | ||
| Collector-emitter voltage | VCEO | -12 | V | Ta = 25°C | 2 | ||
| Emitter-base voltage | VEBO | -6 | V | Ta = 25°C | 2 | ||
| Collector current (DC) | IC | -1.5 | A | Ta = 25°C | 2 | ||
| Collector current (pulsed) | ICP | -3 | A | Pw = 1ms, Single Pulse | 2 | ||
| Power dissipation | PD | 200 | mW | Each terminal mounted on a reference land | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
2SB1689T106 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
2sb1689t106-etched.step/2sb1689t106-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb1689t106.step/2sb1689t106.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (9 pp, sha256
c3eda76db0baa946, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).