component
2SB1561T100Q
Public Made by Adomby adom
ROHM Semicon Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| 2sb1561t100q-etched.glb | 6d ago |
| 2sb1561t100q-etched.step | 6d ago |
| 2sb1561t100q-hero.glb | 6d ago |
| 2sb1561t100q-hero.overlay.json | 6d ago |
| 2sb1561t100q.glb | 6d ago |
| 2sb1561t100q.kicad_mod | 6d ago |
| 2sb1561t100q.kicad_sym | 6d ago |
| 2sb1561t100q.lbr | 6d ago |
| 2sb1561t100q.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
2SB1561T100Q
ROHM Semicon · Bipolar (BJT) · SOT-89
2SB1561T100Q from ROHM Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the PNP transistor; VEBO max is -6 V and IEBO max is -100 nA at VEB = -5 V. |
| 2 | Collector | passive | Collector terminal (also the center tab) of the PNP transistor; VCEO is -60 V, VCBO is -60 V, IC max is -2 A (ICP -6 A for 10 ms single pulse). |
| 3 | Emitter | passive | Emitter terminal of the PNP transistor, the reference for VCE and VBE. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -60 | V | 2 | |||
| Collector-emitter voltage | VCEO | -60 | V | 2 | |||
| Emitter-base voltage | VEBO | -6 | V | 2 | |||
| Collector current | IC | -2 | A | 2 | |||
| Collector current (pulse) | ICP | -6 | A | Pw=10ms, Single Pulse | 2 | ||
| Power dissipation | PD | 0.5 | W | Each terminal mounted on a reference land | 2 | ||
| Power dissipation | PD | 2 | W | Mounted on a ceramic board (40×40×0.7mm) | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 | ||
| Collector-base breakdown voltage | BVCBO | -60 | V | IC = -50μA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | -60 | V | IC = -1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | -6 | V | IE = -50μA | 2 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB = -50V | 2 | ||
| Emitter cut-off current | IEBO | -100 | nA | VEB = -5V | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -150 | -350 | mV | IC = -1A, IB = -50mA, pulsed (*4) | 2 | |
| DC current gain | hFE1 | 120 | 270 | - | VCE = -2V, IC = -500mA, pulsed (*4) | 2 | |
| DC current gain | hFE2 | 45 | - | VCE = -2V, IC = -1.5A, pulsed (*4) | 2 |
CAD (KiCad official)
- Symbol:
2SB1561T100Q - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sb1561t100q-etched.step/2sb1561t100q-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb1561t100q.step/2sb1561t100q.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (10 pp, sha256
c5441366718cef5b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).