component
2SB1386G-R-AB3-R
Public Made by Adomby adom
UTC(Unisonic Tech) Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 3d ago |
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| 2sb1386g-r-ab3-r-etched.glb | 3d ago |
| 2sb1386g-r-ab3-r-etched.step | 3d ago |
| 2sb1386g-r-ab3-r-hero.glb | 3d ago |
| 2sb1386g-r-ab3-r-hero.overlay.json | 3d ago |
| 2sb1386g-r-ab3-r.glb | 3d ago |
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| README.md | 3d ago |
2SB1386G-R-AB3-R
UTC(Unisonic Tech) · Bipolar (BJT) · SOT-89
2SB1386G-R-AB3-R from UTC(Unisonic Tech), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet lists Emitter-Base voltage VEBO as -6 V max. |
| 2 | C | passive | Collector of the PNP transistor; rated VCBO -30 V, VCEO -20 V, IC(DC) -5 A and IC(PULSE) -10 A. |
| 3 | E | passive | Emitter of the PNP transistor; the datasheet gives no separate rating for this pin beyond the VEBO -6 V limit. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -30 | V | IC= -50μA | 2 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | -20 | V | IC= -1mA | 2 | ||
| Emitter-Base Breakdown Voltage | BVEBO | -6 | V | IE= -50μA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -1 | V | IC/IB= -4A/-0.1A | 2 | ||
| Collector Cut-off Current | ICBO | -0.5 | μA | VCB= -20V | 2 | ||
| Emitter Cut-off Current | IEBO | -0.5 | μA | VEB= -5V | 2 | ||
| DC Current Gain (rank R) | hFE | 180 | 390 | VCE= -2V, IC= -0.5A | 2 | ||
| Transition Frequency | fT | 120 | MHz | VCE= -6V, IE= 50mA, f=30MHz | 2 | ||
| Output Capacitance | Cob | 60 | pF | VCB= -20V, IE= 0A, f=1MHz | 2 | ||
| Collector-Emitter Saturation Voltage (typical) | VCE(SAT) | -0.35 | V | IC/IB = -4A/-0.1A | 1 | ||
| Collector-Base Voltage | VCBO | -30 | V | TA=25C | 2 | ||
| Collector-Emitter Voltage | VCEO | -20 | V | TA=25C | 2 | ||
| Emitter-Base Voltage | VEBO | -6 | V | TA=25C | 2 | ||
| Collector Current (DC) | IC(DC) | -5 | A | TA=25C | 2 | ||
| Collector Current (Pulse) | IC(PULSE) | -10 | A | Single pulse, PW=10ms | 2 | ||
| Collector Power Dissipation | PC | 0.5 | W | TA=25C | 2 | ||
| Junction Temperature | TJ | 150 | C | 2 | |||
| Storage Temperature | TSTG | -55 | 150 | C | 2 |
CAD (KiCad official)
- Symbol:
2SB1386G-R-AB3-R - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sb1386g-r-ab3-r-etched.step/2sb1386g-r-ab3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb1386g-r-ab3-r.step/2sb1386g-r-ab3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (5 pp, sha256
468f092f1fe54eaf, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).