component
2SB1261
Public Made by Adomby adom
Changjing Bipolar (BJT), TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| 2sb1261-etched.glb | 6d ago |
| 2sb1261-etched.step | 6d ago |
| 2sb1261-hero.glb | 6d ago |
| 2sb1261-hero.overlay.json | 6d ago |
| 2sb1261.glb | 6d ago |
| 2sb1261.kicad_mod | 6d ago |
| 2sb1261.kicad_sym | 6d ago |
| 2sb1261.lbr | 6d ago |
| 2sb1261.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
2SB1261
Changjing · Bipolar (BJT) · TO-252-2L
2SB1261 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the emitter-base voltage is rated VEBO -7 V with a maximum base-side breakdown of -7 V (E-B breakdown V(BR)EBO -7 V at IE=-100µA). |
| 2 | COLLECTOR | passive | Collector terminal of the PNP transistor; rated VCBO -60 V and VCEO -60 V with a maximum collector current IC of -3 A. |
| 3 | EMITTER | passive | Emitter terminal of the PNP transistor, rated for VEBO -7 V and operating within the junction/storage range of -55 to +150 ℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -60 | V | 1 | |||
| Collector-Base Voltage | VCBO | -60 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -7 | V | 1 | |||
| Collector Current | IC | -3 | A | 1 | |||
| Collector Power Dissipation | PC | 1 | W | 1 | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance From Junction To Ambient | RθJA | 125 | ℃/W | 1 | |||
| Collector-base breakdown voltage | V(BR)CBO | -60 | V | IC=-100µA,IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -60 | V | IC=-1mA,IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -7 | V | IE=-100µA,IC=0 | 2 | ||
| Collector cut-off current | ICBO | -10 | μA | VCB=-60V,IE=0 | 2 | ||
| Emitter cut-off current | IEBO | -10 | μA | VEB=-7V,IC=0 | 2 | ||
| DC current gain hFE(1) | hFE(1) | 60 | VCE=-2V, IC=-0.2A; pulse test | 2 | |||
| DC current gain hFE(2) | hFE(2) | 100 | 400 | VCE=-2V, IC=-0.6A; pulse test | 2 | ||
| DC current gain hFE(3) | hFE(3) | 50 | VCE=-2V, IC=-2A; pulse test | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC=-1.5A,IB=-0.15A; pulse test | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC=-1.5A,IB=-0.15A; pulse test | 2 | ||
| Collector output capacitance | Cob | 40 | pF | VCB=-10V,IE=0, f=1MHz | 2 | ||
| Transition frequency | fT | 50 | MHz | VCE=-5V,IC=-1.5A | 2 |
CAD (KiCad official)
- Symbol:
2SB1261 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
2sb1261-etched.step/2sb1261-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb1261.step/2sb1261.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
cac26ac597db8efe, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).